The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
현장 사파이어 기판에 나노미터 크기 Zn 및 Al 도트의 위치 제어 측면 증착은 날카로운 광섬유 프로브 팁의 광학 근거리장을 사용하여 디에틸아연과 트리메틸알루미늄을 분리함으로써 달성되었습니다. 증착된 Zn 및 Al 도트의 최소 직경은 각각 37 및 25 nm였으며 이는 섬유 프로브의 정점 직경과 비슷합니다. 증착 중에 반응물 분자를 변경함으로써 나노미터 Zn 및 Al 도트가 동일한 사파이어 기판에 높은 정밀도로 연속적으로 증착되었습니다. 이 점들 사이의 거리는 100nm 정도로 짧았습니다.
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Yoh YAMAMOTO, Motonobu KOUROGI, Motoichi OHTSU, Geun Hyoung LEE, Tadashi KAWAZOE, "Lateral Integration of Zn and Al Dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 12, pp. 2081-2085, December 2002, doi: .
Abstract: In-situ position-controlled lateral deposition of nanometer-size Zn and Al dots on a sapphire substrate was accomplished by dissociating diethylzinc and trimethylaluminum using an optical near field on a sharpened optical fiber probe tip. The minimum diameters of the Zn and Al dots deposited were 37 and 25 nm, respectively, comparable with the apex diameter of the fiber probe. By changing the reactant molecules during deposition, nanometric Zn and Al dots were successively deposited on the same sapphire substrate with high precision. The distance between these dots was as short as 100 nm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_12_2081/_p
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@ARTICLE{e85-c_12_2081,
author={Yoh YAMAMOTO, Motonobu KOUROGI, Motoichi OHTSU, Geun Hyoung LEE, Tadashi KAWAZOE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Lateral Integration of Zn and Al Dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe},
year={2002},
volume={E85-C},
number={12},
pages={2081-2085},
abstract={In-situ position-controlled lateral deposition of nanometer-size Zn and Al dots on a sapphire substrate was accomplished by dissociating diethylzinc and trimethylaluminum using an optical near field on a sharpened optical fiber probe tip. The minimum diameters of the Zn and Al dots deposited were 37 and 25 nm, respectively, comparable with the apex diameter of the fiber probe. By changing the reactant molecules during deposition, nanometric Zn and Al dots were successively deposited on the same sapphire substrate with high precision. The distance between these dots was as short as 100 nm.},
keywords={},
doi={},
ISSN={},
month={December},}
부
TY - JOUR
TI - Lateral Integration of Zn and Al Dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe
T2 - IEICE TRANSACTIONS on Electronics
SP - 2081
EP - 2085
AU - Yoh YAMAMOTO
AU - Motonobu KOUROGI
AU - Motoichi OHTSU
AU - Geun Hyoung LEE
AU - Tadashi KAWAZOE
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2002
AB - In-situ position-controlled lateral deposition of nanometer-size Zn and Al dots on a sapphire substrate was accomplished by dissociating diethylzinc and trimethylaluminum using an optical near field on a sharpened optical fiber probe tip. The minimum diameters of the Zn and Al dots deposited were 37 and 25 nm, respectively, comparable with the apex diameter of the fiber probe. By changing the reactant molecules during deposition, nanometric Zn and Al dots were successively deposited on the same sapphire substrate with high precision. The distance between these dots was as short as 100 nm.
ER -