The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
GaAs 기판의 GaInNAs 합금은 활성층으로서 장파장 수직 공동 표면 방출 레이저(VCSEL)에 매우 유망해 왔습니다. GaInNAs/GaAs 모서리 방출 레이저의 임계 전류에 대한 우수한 온도 특성이 많은 그룹에서 보고되었음에도 불구하고 임계 전류를 제외한 레이저 특성의 온도 의존성에 대한 논의는 거의 없습니다. 본 논문에서는 λ=1.27 µm 및 λ=1.30 µm에서 방출되는 CBE(Chemical Beam Epitaxy)에 의해 성장된 GaInNAs 레이저의 온도 특성을 자세히 조사했습니다. 특성 온도 (T0) 10~80 범위
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Takeo KAGEYAMA, Tomoyuki MIYAMOTO, Shigeki MAKINO, Yoshihiko IKENAGA, Fumio KOYAMA, Kenichi IGA, "Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 1, pp. 71-78, January 2002, doi: .
Abstract: A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_1_71/_p
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@ARTICLE{e85-c_1_71,
author={Takeo KAGEYAMA, Tomoyuki MIYAMOTO, Shigeki MAKINO, Yoshihiko IKENAGA, Fumio KOYAMA, Kenichi IGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy},
year={2002},
volume={E85-C},
number={1},
pages={71-78},
abstract={A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
keywords={},
doi={},
ISSN={},
month={January},}
부
TY - JOUR
TI - Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 71
EP - 78
AU - Takeo KAGEYAMA
AU - Tomoyuki MIYAMOTO
AU - Shigeki MAKINO
AU - Yoshihiko IKENAGA
AU - Fumio KOYAMA
AU - Kenichi IGA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2002
AB - A GaInNAs alloy on GaAs substrate has been very promising for long-wavelength vertical-cavity surface-emitting lasers (VCSELs) as an active layer. In spite of many groups reported the excellent temperature characteristics of the threshold current of the GaInNAs/GaAs edge-emitting lasers, discussions of the temperature dependence of the lasing characteristics except threshold current is few. In this paper, temperature characteristics of GaInNAs lasers grown by chemical beam epitaxy (CBE) emitting at λ=1.27 µm and λ=1.30 µm were investigated in detail. The characteristic temperature (T0) ranging from 10 to 80
ER -