The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 HTS 준입자 주입 장치를 사용하여 SFQ와 CMOS 회로 사이의 인터페이스 장치의 프로토타입을 제작했습니다. 준입자 주입으로 브릿지 영역이 저항성이 생기고 드레인 전극에 고전압이 나타난다. 소자 동작 테스트로서 함수 발생기의 신호를 게이트 전극에 인가하여 소자가 온/오프 동작을 성공적으로 반복하는 것을 관찰했습니다. 또한 열 효과를 고려하여 소자 특성을 설명하는데 성공했습니다.
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Hidehiro SHIGA, Yoichi OKABE, "HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 650-653, March 2002, doi: .
Abstract: We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_650/_p
부
@ARTICLE{e85-c_3_650,
author={Hidehiro SHIGA, Yoichi OKABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits},
year={2002},
volume={E85-C},
number={3},
pages={650-653},
abstract={We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.},
keywords={},
doi={},
ISSN={},
month={March},}
부
TY - JOUR
TI - HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 650
EP - 653
AU - Hidehiro SHIGA
AU - Yoichi OKABE
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.
ER -