The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
HEB(열전전자 볼로미터)용 이전 장치 모델은 소신호 매개변수를 계산하기 위해 집중 요소 접근 방식을 적용했습니다. 본 연구에서는 임계 전류 효과를 포함한 비선형 10차원 열 균형 방정식을 사용하여 대신호 매개변수를 계산합니다. HEB의 소신호 비트 항에 대한 선형화된 열 균형을 해결하여 소신호 등가물을 얻습니다. 이 모델에서 흡수된 바이어스 전력 밀도는 HEB 브리지를 따라 프로파일로 처리되며 전기열 피드백은 브리지의 다른 부분에서 다르게 작용합니다. 이 모델은 이전 모델보다 약 XNUMXdB 낮은 보다 현실적인 변환 이득 수치를 예측합니다.
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Harald F. MERKEL, Pourya KHOSROPANAH, Aurèle ADAM, Serguei CHEREDNICHENKO, Erik Ludvig KOLLBERG, "A Distributed Device Model for Hot-Electron Bolometers" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 725-732, March 2002, doi: .
Abstract: Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_725/_p
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@ARTICLE{e85-c_3_725,
author={Harald F. MERKEL, Pourya KHOSROPANAH, Aurèle ADAM, Serguei CHEREDNICHENKO, Erik Ludvig KOLLBERG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Distributed Device Model for Hot-Electron Bolometers},
year={2002},
volume={E85-C},
number={3},
pages={725-732},
abstract={Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.},
keywords={},
doi={},
ISSN={},
month={March},}
부
TY - JOUR
TI - A Distributed Device Model for Hot-Electron Bolometers
T2 - IEICE TRANSACTIONS on Electronics
SP - 725
EP - 732
AU - Harald F. MERKEL
AU - Pourya KHOSROPANAH
AU - Aurèle ADAM
AU - Serguei CHEREDNICHENKO
AU - Erik Ludvig KOLLBERG
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.
ER -