The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 삼중층 구조의 램프형 조셉슨 접합을 제작했습니다. YBa의 이중층2Cu3O7-X (YBCO)/CEO2 SrTiO에 증착되었습니다.3 (100) 기판. 그런 다음 표준 포토리소그래피 공정을 사용하여 이중층 표면에 직경 2μm의 원형 패턴을 에칭했습니다. 이중층 표면에 45도의 입사각을 갖는 Ar 이온 밀링 동안 샘플이 회전되었습니다. 이 과정으로 인해 거꾸로 된 원뿔형이 형성되었습니다. 경사로 가장자리 표면을 수정한 후 상단 전극을 위해 또 다른 YBCO 필름을 증착했습니다. 접합점은 다음을 보여주었습니다. IV 저항성 션트 접합과 자속 흐름 유형 사이의 특성.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Masayuki MATSUSHITA, Yoichi OKABE, "Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 769-771, March 2002, doi: .
Abstract: We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_769/_p
부
@ARTICLE{e85-c_3_769,
author={Masayuki MATSUSHITA, Yoichi OKABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures},
year={2002},
volume={E85-C},
number={3},
pages={769-771},
abstract={We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.},
keywords={},
doi={},
ISSN={},
month={March},}
부
TY - JOUR
TI - Interface-Modified Ramp-Type Josephson Junctions in Trilayer Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 769
EP - 771
AU - Masayuki MATSUSHITA
AU - Yoichi OKABE
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-x (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 µm were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.
ER -