The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
0.5μm 라인 및 공간 폴리실리콘 패턴을 가지며 그 중심이 MOSFET의 게이트 중심에 정렬되는 새로운 테스트 구조는 서브쿼터 마이크론 장치의 핫 캐리어 유도 광전자 방출 분석을 위해 제안되었습니다. 광전자 방출 강도 프로파일은 액체 N을 이용한 광전자 방출 현미경을 사용하여 측정되었습니다.2 냉각된 CCD 이미저. 우리는 MOSFET의 게이트 중심에서 광방출 강도의 피크 위치를 다음보다 충분히 낮은 공간 분해능으로 성공적으로 측정했습니다.
Toshihiro MATSUDA
Mari FUNADA
Takashi OHZONE
Etsumasa KAMEDA
Shinji ODANAKA
Kyoji TAMASHITA
Norio KOIKE
Ken-ichiro TATSUUMA
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Toshihiro MATSUDA, Mari FUNADA, Takashi OHZONE, Etsumasa KAMEDA, Shinji ODANAKA, Kyoji TAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA, "A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1125-1133, May 2002, doi: .
Abstract: A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1125/_p
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@ARTICLE{e85-c_5_1125,
author={Toshihiro MATSUDA, Mari FUNADA, Takashi OHZONE, Etsumasa KAMEDA, Shinji ODANAKA, Kyoji TAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs},
year={2002},
volume={E85-C},
number={5},
pages={1125-1133},
abstract={A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than
keywords={},
doi={},
ISSN={},
month={May},}
부
TY - JOUR
TI - A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1125
EP - 1133
AU - Toshihiro MATSUDA
AU - Mari FUNADA
AU - Takashi OHZONE
AU - Etsumasa KAMEDA
AU - Shinji ODANAKA
AU - Kyoji TAMASHITA
AU - Norio KOIKE
AU - Ken-ichiro TATSUUMA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than
ER -