The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 저손실 전송선, 높은 집적도, 높은 Q 인자 온칩 인덕터 등 실리콘 3차원 MMIC 기술의 장점을 검토합니다. 마스터슬라이스 개념과 결합된 이 기술은 간단한 설계 절차, 짧은 처리 시간, 저렴한 비용 및 LSI 회로와의 통합 가능성도 제공합니다. K 대역 증폭기와 업 컨버터는 Si XNUMX-D MMIC 기술의 고주파수 작동 및 저전력 소비 이점을 보여줍니다. 마스터슬라이스 개념이 제공하는 높은 통합 수준을 설명하기 위해 C 대역 Si 바이폴라 단일 칩 트랜시버가 제안되었습니다. 마지막으로, 높은 Q 인자 온칩 인덕터에 대한 최근의 발전을 통해 이 문서에 제시된 S 대역 저잡음 증폭기의 설계가 가능해졌습니다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Belinda PIERNAS, Kenjiro NISHIKAWA, Kenji KAMOGAWA, Ichihiko TOYODA, "Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1394-1403, July 2002, doi: .
Abstract: This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1394/_p
부
@ARTICLE{e85-c_7_1394,
author={Belinda PIERNAS, Kenjiro NISHIKAWA, Kenji KAMOGAWA, Ichihiko TOYODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances},
year={2002},
volume={E85-C},
number={7},
pages={1394-1403},
abstract={This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.},
keywords={},
doi={},
ISSN={},
month={July},}
부
TY - JOUR
TI - Three-Dimensional MMIC Technology on Silicon: Review and Recent Advances
T2 - IEICE TRANSACTIONS on Electronics
SP - 1394
EP - 1403
AU - Belinda PIERNAS
AU - Kenjiro NISHIKAWA
AU - Kenji KAMOGAWA
AU - Ichihiko TOYODA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.
ER -