The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
저전압 SOI(silicon-on-insulator) 전압 기준 회로가 개발되었습니다. 이는 임계 전압 합산 아키텍처를 기반으로 하며 출력은 피드백 증폭기의 입력 오프셋에 영향을 받지 않습니다. 따라서 출력 분산이 상당히 줄어듭니다. 도핑되지 않은 MOSFET은 임계 전압이 작기 때문에 공핍 모드 트랜지스터로 사용됩니다. 온도에 민감하지 않은 전압 기준 회로를 설계하기 위해 완전히 공핍된 CMOS/SOI 기술에서 정상 및 도핑되지 않은 MOSFET의 온도 의존성을 연구합니다. 완전히 공핍된 CMOS/SIMOX 공정으로 제작된 프로토타입 회로의 측정 기준 전압은 530입니다.
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부
Mamoru UGAJIN, Kenji SUZUKI, Tsuneo TSUKAHARA, "A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 8, pp. 1588-1595, August 2002, doi: .
Abstract: A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_8_1588/_p
부
@ARTICLE{e85-c_8_1588,
author={Mamoru UGAJIN, Kenji SUZUKI, Tsuneo TSUKAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI},
year={2002},
volume={E85-C},
number={8},
pages={1588-1595},
abstract={A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
keywords={},
doi={},
ISSN={},
month={August},}
부
TY - JOUR
TI - A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI
T2 - IEICE TRANSACTIONS on Electronics
SP - 1588
EP - 1595
AU - Mamoru UGAJIN
AU - Kenji SUZUKI
AU - Tsuneo TSUKAHARA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2002
AB - A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
ER -