The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
더 높은 차단 전압, 더 높은 작동 온도, 빠른 스위칭 특성, 더 낮은 스위칭 손실 등의 장점을 갖춘 탄화규소(SiC) MOSFET은 더 많은 주목을 받고 있으며 응용 분야에서 기존 실리콘(Si) 전력 반도체를 대체할 수 있게 되었습니다. 위의 모든 장점에도 불구하고 결과적으로 SiC MOSFET의 초고속 스위칭 전환으로 인해 전자기 간섭(EMI) 문제가 유발됩니다. EMI 조사를 위해 SiC MOSFET의 스위칭 동작을 빠르고 정확하게 평가하기 위해 분석 모델이 제안되었습니다. 이 모델은 기생 인덕턴스, 접합 커패시터의 비선형성, 네거티브 피드백 효과 등 대부분의 핵심 요소를 종합적으로 고려했습니다. Ls 및 Cgd 전력 및 게이트 스테이지 루프에 의해 공유되는 트랜스 컨덕턴스의 비선형성, 전압 및 전류 링잉 스테이지 중 표피 효과는 SiC MOSFET의 스위칭 성능에 상당한 영향을 미칩니다. 또한 Stateflow를 통해 SiC MOSFET의 스위칭 동작을 분석적이고 직관적으로 설명하기 위해 FSM(유한 상태 기계)이 특히 활용됩니다. 이중 펄스 테스트(DPT)를 기반으로 스위칭 전환 동안 계산된 파형과 측정된 파형을 비교하여 제안 모델의 유효성과 정확성을 검증합니다. 또한, MOSFET의 드레인-소스 전압 스펙트럼을 적절하게 표현할 수 있어 SiC 소자 적용 시 EMI 조사에 적합합니다.
Yingzhe WU
University of Electronic Science and Technology of China (UESTC)
Hui LI
University of Electronic Science and Technology of China (UESTC)
Wenjie MA
University of Electronic Science and Technology of China (UESTC)
Dingxin JIN
University of Electronic Science and Technology of China (UESTC)
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부
Yingzhe WU, Hui LI, Wenjie MA, Dingxin JIN, "Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 9, pp. 646-657, September 2019, doi: 10.1587/transele.2018ECP5079.
Abstract: With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECP5079/_p
부
@ARTICLE{e102-c_9_646,
author={Yingzhe WU, Hui LI, Wenjie MA, Dingxin JIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation},
year={2019},
volume={E102-C},
number={9},
pages={646-657},
abstract={With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.},
keywords={},
doi={10.1587/transele.2018ECP5079},
ISSN={1745-1353},
month={September},}
부
TY - JOUR
TI - Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation
T2 - IEICE TRANSACTIONS on Electronics
SP - 646
EP - 657
AU - Yingzhe WU
AU - Hui LI
AU - Wenjie MA
AU - Dingxin JIN
PY - 2019
DO - 10.1587/transele.2018ECP5079
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2019
AB - With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of Ls and Cgd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via Stateflow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.
ER -