The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
이 논문에서는 임계값 이하 영역에서 작동하는 초저전력 클래스 AB 벌크 구동 연산 상호컨덕턴스 증폭기를 제시합니다. 전류 미러에 부분 포지티브 피드백을 사용하면 추가 전력 소비 및 레이아웃 영역 없이도 효과적인 상호 컨덕턴스와 출력 전압 스윙이 크게 향상됩니다. 기존 OTA와 제안된 OTA는 모두 180nm CMOS 프로세스용으로 설계 및 시뮬레이션되었습니다. 이는 192nW의 초저전력을 소모합니다. 제안된 OTA는 14dB의 DC 이득 향상뿐만 아니라 200%의 슬루율 향상도 특징으로 한다. 또한 향상된 이득으로 인해 기존 OTA보다 단위 이득 대역폭이 5.3배 더 넓어졌습니다.
Seong Jin CHOE
Kyungpook National University
Ju Sang LEE
Kyungpook National University
Sung Sik PARK
Kyungpook National University
Sang Dae YU
Kyungpook National University
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부
Seong Jin CHOE, Ju Sang LEE, Sung Sik PARK, Sang Dae YU, "Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 5, pp. 420-423, May 2019, doi: 10.1587/transele.2018ECS6002.
Abstract: This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECS6002/_p
부
@ARTICLE{e102-c_5_420,
author={Seong Jin CHOE, Ju Sang LEE, Sung Sik PARK, Sang Dae YU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance},
year={2019},
volume={E102-C},
number={5},
pages={420-423},
abstract={This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.},
keywords={},
doi={10.1587/transele.2018ECS6002},
ISSN={1745-1353},
month={May},}
부
TY - JOUR
TI - Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance
T2 - IEICE TRANSACTIONS on Electronics
SP - 420
EP - 423
AU - Seong Jin CHOE
AU - Ju Sang LEE
AU - Sung Sik PARK
AU - Sang Dae YU
PY - 2019
DO - 10.1587/transele.2018ECS6002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2019
AB - This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.
ER -