The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
조회수
109
우리는 90°와 모놀리식으로 통합된 InP 기반 광검출기를 제시합니다.° 400Gb/s 이상의 일관된 전송 시스템을 향한 하이브리드. 3GBaud 작동을 통해 40Gb/s DP(이중 편파)-400QAM(16진 직교 진폭 변조) 및 16Gb/s DP-600QAM을 위해 64GHz 이상의 넓은 64dB 대역폭을 달성하기 위해 GaInAs의 얇은 흡수 및 낮은 도핑 n형 InP 버퍼 층은 짧은 캐리어 이동 시간과 낮은 기생 용량 사이의 균형을 극복하기 위해 도입되었습니다. 또한, 이 InP 버퍼층은 90°C에서 전파 손실을 줄이는 데 기여합니다.° 하이브리드 도파관, 즉 이 접근 방식을 사용하면 높은 응답성과 넓은 3dB 대역폭 작동이 가능합니다. C-band(1530nm~1570nm) 동작을 위한 코히어런트 수신기 모듈은 3GHz 이상의 넓은 40dB 대역폭과 0.070A/W 이상의 높은 수신기 응답성을 나타냈습니다(C-band 내 칩 응답성: 0.130A/ W) 이 포토다이오드 설계를 갖춘 광검출기 덕분입니다. 파장 분할 다중화에서 사용 가능한 파장을 대용량 광 전송으로 확장하기 위해 90° L밴드(1565nm~1612nm) 동작에 최적화된 하이브리드도 제작해 L밴드에서 0.120A/W 이상의 높은 응답성을 나타냈다. 마지막으로, 90채널 핀 포토다이오드, XNUMX개의 XNUMX°C로 구성된 InP 기반 모놀리식 통합 광소자입니다.° 모듈의 소형화를 위해 하이브리드와 빔 스플리터를 구현했으며, 70을 사용한 광검출기에 비해 모듈 전체 설치 공간을 90% 줄였습니다.° 하이브리드 및 4채널 핀 포토다이오드.
Hideki YAGI
Sumitomo Electric Industries, Ltd.
Takuya OKIMOTO
Sumitomo Electric Device Innovations, Inc.
Naoko INOUE
Sumitomo Electric Industries, Ltd.
Koji EBIHARA
Sumitomo Electric Device Innovations, Inc.
Kenji SAKURAI
Sumitomo Electric Device Innovations, Inc.
Munetaka KUROKAWA
Sumitomo Electric Industries, Ltd.
Satoru OKAMOTO
Sumitomo Electric Device Innovations, Inc.
Kazuhiko HORINO
Sumitomo Electric Device Innovations, Inc.
Tatsuya TAKEUCHI
Sumitomo Electric Device Innovations, Inc.
Kouichiro YAMAZAKI
Sumitomo Electric Device Innovations, Inc.
Yoshifumi NISHIMOTO
Sumitomo Electric Device Innovations, Inc.
Yasuo YAMASAKI
Sumitomo Electric Device Innovations, Inc.
Mitsuru EKAWA
Sumitomo Electric Industries, Ltd.,Sumitomo Electric Device Innovations, Inc.
Masaru TAKECHI
Sumitomo Electric Industries, Ltd.
Yoshihiro YONEDA
Sumitomo Electric Device Innovations, Inc.
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Hideki YAGI, Takuya OKIMOTO, Naoko INOUE, Koji EBIHARA, Kenji SAKURAI, Munetaka KUROKAWA, Satoru OKAMOTO, Kazuhiko HORINO, Tatsuya TAKEUCHI, Kouichiro YAMAZAKI, Yoshifumi NISHIMOTO, Yasuo YAMASAKI, Mitsuru EKAWA, Masaru TAKECHI, Yoshihiro YONEDA, "InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 4, pp. 347-356, April 2019, doi: 10.1587/transele.2018ODI0006.
Abstract: We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ODI0006/_p
부
@ARTICLE{e102-c_4_347,
author={Hideki YAGI, Takuya OKIMOTO, Naoko INOUE, Koji EBIHARA, Kenji SAKURAI, Munetaka KUROKAWA, Satoru OKAMOTO, Kazuhiko HORINO, Tatsuya TAKEUCHI, Kouichiro YAMAZAKI, Yoshifumi NISHIMOTO, Yasuo YAMASAKI, Mitsuru EKAWA, Masaru TAKECHI, Yoshihiro YONEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems},
year={2019},
volume={E102-C},
number={4},
pages={347-356},
abstract={We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.},
keywords={},
doi={10.1587/transele.2018ODI0006},
ISSN={1745-1353},
month={April},}
부
TY - JOUR
TI - InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 347
EP - 356
AU - Hideki YAGI
AU - Takuya OKIMOTO
AU - Naoko INOUE
AU - Koji EBIHARA
AU - Kenji SAKURAI
AU - Munetaka KUROKAWA
AU - Satoru OKAMOTO
AU - Kazuhiko HORINO
AU - Tatsuya TAKEUCHI
AU - Kouichiro YAMAZAKI
AU - Yoshifumi NISHIMOTO
AU - Yasuo YAMASAKI
AU - Mitsuru EKAWA
AU - Masaru TAKECHI
AU - Yoshihiro YONEDA
PY - 2019
DO - 10.1587/transele.2018ODI0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2019
AB - We present InP-based photodetectors monolithically integrated with a 90° hybrid toward over 400Gb/s coherent transmission systems. To attain a wide 3-dB bandwidth of more than 40GHz for 400Gb/s dual-polarization (DP)-16-ary quadrature amplitude modulation (16QAM) and 600Gb/s DP-64QAM through 64GBaud operation, A p-i-n photodiode structure consisting of a GaInAs thin absorption and low doping n-typed InP buffer layers was introduced to overcome the trade-off between short carrier transit time and low parasitic capacitance. Additionally, this InP buffer layer contributes to the reduction of propagation loss in the 90° hybrid waveguide, that is, this approach allows a high responsivity as well as wide 3-dB bandwidth operation. The coherent receiver module for the C-band (1530nm - 1570nm) operation indicated the wide 3-dB bandwidth of more than 40GHz and the high receiver responsivity of more than 0.070A/W (Chip responsivity within the C-band: 0.130A/W) thanks to photodetectors with this photodiode design. To expand the usable wavelengths in wavelength-division multiplexing toward large-capacity optical transmission, the photodetector integrated with the 90° hybrid optimized for the L-band (1565nm - 1612nm) operation was also fabricated, and exhibited the high responsivity of more than 0.120A/W over the L-band. Finally, the InP-based monolithically integrated photonic device consisting of eight-channel p-i-n photodiodes, two 90° hybrids and a beam splitter was realized for the miniaturization of modules and afforded the reduction of the total footprint by 70% in a module compared to photodetectors with the 90° hybrid and four-channel p-i-n photodiodes.
ER -