The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
SiO에 형성된 AuGe 합금 소스 및 드레인(S/D)2하부 접촉 구조를 갖는 유기 전계 효과 트랜지스터(OFET)의 스케일링을 위해 리소그래피 공정에 의한 /Si(100)를 조사했습니다. S/D는 OFPR의 레지스트를 활용한 리프트오프 공정으로 제작되었습니다. 최소 채널 길이가 2.4μm인 OFET는 리프트 오프 공정을 통해 성공적으로 제작되었습니다. Au S/D의 제조 수율은 57%인 반면, Au-93%Ge와 Au-100%Ge S/D의 경우 각각 1%와 7.4%로 증가했다. Au-7.4%Ge S/D를 갖는 OFET의 이동도는 1.1×10로 감소했지만-3 cm2/(Vs), 5.5×10으로 증가할 수 있게 되었습니다.-2 cm2/(Vs) H를 이용한 표면세정에 의한2SO4/H2O2 리프트 오프 공정 후 혼합 용액(SPM) 및 금속화 후 어닐링(PMA)은 Au S/D를 사용한 OFET보다 높았습니다.
Shun-ichiro OHMI
Tokyo Institute of Technology
Mizuha HIROKI
Tokyo Institute of Technology
Yasutaka MAEDA
Tokyo Institute of Technology
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Shun-ichiro OHMI, Mizuha HIROKI, Yasutaka MAEDA, "AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 2, pp. 138-142, February 2019, doi: 10.1587/transele.2018OMP0008.
Abstract: The AuGe-alloy source and drain (S/D) formed on SiO2/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10-3 cm2/(Vs), it was able to be increased to 5.5×10-2 cm2/(Vs) by the surface cleaning utilizing H2SO4/H2O2 mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018OMP0008/_p
부
@ARTICLE{e102-c_2_138,
author={Shun-ichiro OHMI, Mizuha HIROKI, Yasutaka MAEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs},
year={2019},
volume={E102-C},
number={2},
pages={138-142},
abstract={The AuGe-alloy source and drain (S/D) formed on SiO2/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10-3 cm2/(Vs), it was able to be increased to 5.5×10-2 cm2/(Vs) by the surface cleaning utilizing H2SO4/H2O2 mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.},
keywords={},
doi={10.1587/transele.2018OMP0008},
ISSN={1745-1353},
month={February},}
부
TY - JOUR
TI - AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 138
EP - 142
AU - Shun-ichiro OHMI
AU - Mizuha HIROKI
AU - Yasutaka MAEDA
PY - 2019
DO - 10.1587/transele.2018OMP0008
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2019
AB - The AuGe-alloy source and drain (S/D) formed on SiO2/Si(100) by the lithography process was investigated for the scaling of the organic field-effect transistors (OFETs) with bottom-contact geometry. The S/D was fabricated by the lift-off process utilizing the resist of OFPR. The OFETs with minimum channel length of 2.4 µm was successfully fabricated by the lift-off process. The fabrication yield of Au S/D was 57%, while it was increased to 93% and 100% in case of the Au-1%Ge and Au-7.4%Ge S/D, respectively. Although the mobility of the OFETs with Au-7.4%Ge S/D was decreased to 1.1×10-3 cm2/(Vs), it was able to be increased to 5.5×10-2 cm2/(Vs) by the surface cleaning utilizing H2SO4/H2O2 mixture solution (SPM) and post metallization annealing (PMA) after lift-off process, which was higher than that of OFET with Au S/D.
ER -