The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 GaAs/InGaP 이종접합 바이폴라 트랜지스터(HBT) 프로세스를 사용하는 핸드셋 애플리케이션을 위한 새로운 고조파 종단 기능을 갖춘 고효율 Class-E 및 소형 Doherty 전력 증폭기(PA)를 제시합니다. 새로운 고조파 종단 회로는 정합 회로의 삽입 손실을 효과적으로 줄여 장치의 소형화를 가능하게 합니다. Doherty PA는 IC 기판의 금속-절연체-금속(MIM) 커패시터, 본딩 와이어 인덕터 및 인쇄 회로 기판(PCB)의 짧은 마이크로 스트립 라인으로 구성된 집중 요소 변압기를 사용합니다. 제작된 Class-E PA는 69.0GHz에서 최대 1.95%, 67.6GHz에서 최대 2.535%의 PAE(Power Added Efficiency)를 나타냅니다. 제작된 Doherty PA는 25.5MHz 대역폭 QPSK(Quadrature Phase Shift Keying) 50.1dB PAPR(peak-to-average-power-ratio) LTE에서 평균 출력 전력 10dBm 및 PAE 6.16%를 나타냅니다. 1.95GHz의 신호. 제작된 칩 크기는 1mm보다 작습니다.2. 입력 및 출력 Doherty 변압기 영역은 각각 0.5mm x 1.0mm 및 0.7mm x 0.7mm입니다.
Tsuyoshi SUGIURA
Samsung R&D Institute Japan
Satoshi FURUTA
Samsung R&D Institute Japan
Tadamasa MURAKAMI
Samsung R&D Institute Japan
Koki TANJI
Samsung R&D Institute Japan
Norihisa OTANI
Samsung R&D Institute Japan
Toshihiko YOSHIMASU
Waseda University
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Tsuyoshi SUGIURA, Satoshi FURUTA, Tadamasa MURAKAMI, Koki TANJI, Norihisa OTANI, Toshihiko YOSHIMASU, "High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 10, pp. 699-706, October 2019, doi: 10.1587/transele.2019MMP0007.
Abstract: This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019MMP0007/_p
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@ARTICLE{e102-c_10_699,
author={Tsuyoshi SUGIURA, Satoshi FURUTA, Tadamasa MURAKAMI, Koki TANJI, Norihisa OTANI, Toshihiko YOSHIMASU, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications},
year={2019},
volume={E102-C},
number={10},
pages={699-706},
abstract={This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.},
keywords={},
doi={10.1587/transele.2019MMP0007},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 699
EP - 706
AU - Tsuyoshi SUGIURA
AU - Satoshi FURUTA
AU - Tadamasa MURAKAMI
AU - Koki TANJI
AU - Norihisa OTANI
AU - Toshihiko YOSHIMASU
PY - 2019
DO - 10.1587/transele.2019MMP0007
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2019
AB - This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.
ER -