The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
수평 슬롯 도파관을 사용하면 빛이 얇은 영역에 강력하게 가두어질 수 있습니다. 슬롯 영역에 빛을 강력하게 가두는 것은 빛과 물질의 상호 작용을 향상시키고 고감도 감지 장치를 제공하는 이점을 제공합니다. Nb를 이용한 수평 슬롯 도파관의 기본 특성을 이론적으로 조사했습니다.2O5. SiO 사이의 결합 계수2 슬롯 및 에어 슬롯 도파관이 계산되었습니다. 슬롯 도파관의 굽힘 손실 특성도 분석되었습니다. 높은 수직성을 갖는 측벽을 얻기 위해 필요한 반응성 이온 에칭의 에칭 조건을 연구했습니다. Nb를 이용한 수평 슬롯 도파관 제작 공정을 제안한다.2O5 SiO2의 박막 증착 및 선택적 에칭2. SiO2를 갖는 수평 슬롯 도파관이 제작되었습니다.2 30 nm 미만 SiO의 슬롯2. 슬롯 도파관을 통과하는 전파된 빛도 얻어졌습니다.
Yoshiki HAYAMA
Kanagawa Institute of Technology
Katsumi NAKATSUHARA
Kanagawa Institute of Technology
Shinta UCHIBORI
Kanagawa Institute of Technology
Takeshi NISHIZAWA
Kanagawa Institute of Technology
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Yoshiki HAYAMA, Katsumi NAKATSUHARA, Shinta UCHIBORI, Takeshi NISHIZAWA, "Study on Analysis and Fabrication Conditions of Horizontal SiO2 Slot Waveguides Using Nb2O5" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 11, pp. 669-678, November 2020, doi: 10.1587/transele.2019OCP0007.
Abstract: Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019OCP0007/_p
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@ARTICLE{e103-c_11_669,
author={Yoshiki HAYAMA, Katsumi NAKATSUHARA, Shinta UCHIBORI, Takeshi NISHIZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study on Analysis and Fabrication Conditions of Horizontal SiO2 Slot Waveguides Using Nb2O5},
year={2020},
volume={E103-C},
number={11},
pages={669-678},
abstract={Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.},
keywords={},
doi={10.1587/transele.2019OCP0007},
ISSN={1745-1353},
month={November},}
부
TY - JOUR
TI - Study on Analysis and Fabrication Conditions of Horizontal SiO2 Slot Waveguides Using Nb2O5
T2 - IEICE TRANSACTIONS on Electronics
SP - 669
EP - 678
AU - Yoshiki HAYAMA
AU - Katsumi NAKATSUHARA
AU - Shinta UCHIBORI
AU - Takeshi NISHIZAWA
PY - 2020
DO - 10.1587/transele.2019OCP0007
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2020
AB - Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.
ER -