The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
밀리미터파 빔포밍 위상 배열 송수신기 및 고차 변조 MIMO(다중 입력 다중 출력) 송수신기에 대한 요구 사항이 확대되었습니다. 고성능 통합 RF 스위치는 해당 트랜시버가 신호 채널 분배 및 경로 이중화를 지원하는 가장 중요한 구성 요소 중 하나로 간주됩니다. 본 논문에서는 새로운 스위치 병렬 LC 공진 네트워크를 갖춘 CMOS 고절연 및 저손실 RF 스위치를 소개합니다. 제안된 SPDT(Single-Pole Double-Throw) RF 스위치는 68mm의 활성 영역에서 1.0dB의 포트 분리와 0.034dB의 삽입 손실을 구현합니다.2. SPDT RF 스위치는 바디 플로팅 기술이 적용된 2개의 직렬 션트 트랜지스터 쌍과 스위치 병렬 LC 네트워크로 구성됩니다. 네트워크는 꺼진 직렬 트랜지스터를 사용하여 꺼진 용량 C를 공진시킵니다.오프. 측정된 출력 OIP3(21차 교차점)은 10dBm보다 높습니다. 제안된 SPDT RF 스위치는 8GHz부터 20GHz까지 모든 동작 포트의 반사 손실을 65dB 미만으로 유지한다. 고성능 SPDT RF 스위치는 표준 XNUMXnm CMOS 기술로 제작되었습니다.
Xi FU
Tokyo Institute of Technology
Yun WANG
Tokyo Institute of Technology
Zheng LI
Tokyo Institute of Technology
Atsushi SHIRANE
Tokyo Institute of Technology
Kenichi OKADA
Tokyo Institute of Technology
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Xi FU, Yun WANG, Zheng LI, Atsushi SHIRANE, Kenichi OKADA, "A CMOS SPDT RF Switch with 68dB Isolation and 1.0dB Loss Feathering Switched Resonance Network for MIMO Applications" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 7, pp. 280-288, July 2021, doi: 10.1587/transele.2020CDP0004.
Abstract: There are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68dB port isolation and 1.0dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10dB from 8GHz to 20GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020CDP0004/_p
부
@ARTICLE{e104-c_7_280,
author={Xi FU, Yun WANG, Zheng LI, Atsushi SHIRANE, Kenichi OKADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS SPDT RF Switch with 68dB Isolation and 1.0dB Loss Feathering Switched Resonance Network for MIMO Applications},
year={2021},
volume={E104-C},
number={7},
pages={280-288},
abstract={There are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68dB port isolation and 1.0dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10dB from 8GHz to 20GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.},
keywords={},
doi={10.1587/transele.2020CDP0004},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - A CMOS SPDT RF Switch with 68dB Isolation and 1.0dB Loss Feathering Switched Resonance Network for MIMO Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 280
EP - 288
AU - Xi FU
AU - Yun WANG
AU - Zheng LI
AU - Atsushi SHIRANE
AU - Kenichi OKADA
PY - 2021
DO - 10.1587/transele.2020CDP0004
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2021
AB - There are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68dB port isolation and 1.0dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10dB from 8GHz to 20GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.
ER -