The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 공진 터널링 다이오드(RTD)를 기반으로 한 소형 마이크로파 푸시-푸시 발진기를 제작하고 시연했습니다. 칩 면적을 줄이기 위해 대칭형 나선형 인덕터 구조를 사용했다. 설계된 대칭 인덕터는 InP 기반 RTD MMIC(모놀리식 마이크로파 집적 회로) 기술에 통합되어 있습니다. 회로는 0.088mm의 컴팩트한 활성 영역을 차지합니다.2 대칭형 인덕터를 사용하여 제작된 RTD 발진기는 87GHz의 발진 주파수에서 -0.47dBc/Hz의 우수한 성능 지수(FOM)와 함께 191V의 적용 전압에서 27μW의 매우 낮은 DC 전력 소비를 보여줍니다. 이는 대칭 나선형 인덕터를 갖춘 RTD 푸시-푸시 발진기로서 최초의 구현입니다.
Kiwon LEE
Wonkwang University
Yongsik JEONG
Korea Advanced Institute of Science and Technology
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부
Kiwon LEE, Yongsik JEONG, "A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 1, pp. 37-39, January 2021, doi: 10.1587/transele.2020ECS6003.
Abstract: In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020ECS6003/_p
부
@ARTICLE{e104-c_1_37,
author={Kiwon LEE, Yongsik JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor},
year={2021},
volume={E104-C},
number={1},
pages={37-39},
abstract={In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.},
keywords={},
doi={10.1587/transele.2020ECS6003},
ISSN={1745-1353},
month={January},}
부
TY - JOUR
TI - A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor
T2 - IEICE TRANSACTIONS on Electronics
SP - 37
EP - 39
AU - Kiwon LEE
AU - Yongsik JEONG
PY - 2021
DO - 10.1587/transele.2020ECS6003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2021
AB - In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.
ER -