The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 5세대 이동통신망(5G) n260 대역을 위한 고해상도, 소형 CMOS 스위치형 위상변환기(STPS)를 소개한다. 이 작업에는 총 202.5개의 거친 위상 변이 단계와 고해상도 튜닝 단계가 포함됩니다. 브리지 T 토폴로지를 기반으로 하는 대략적인 스테이지는 22.5° 튜닝 단계로 23° 위상 적용 범위를 제공할 수 있습니다. 위상 편이 분해능을 더욱 향상시키기 위해 5°를 포괄하는 소형 미세 조정 스테이지도 조동 스테이지와 통합되었습니다. 39G 새로운 무선에서 미세한 빔 조정 및 고정밀 위상 교정을 지원하기 위해 하위 수준 위상 편이 해상도가 실현됩니다. 제안된 미세 조정 단계에서는 단순화된 위상 제어 알고리즘과 삽입 손실 억제가 유지될 수 있습니다. 측정에서 0.1GHz에서 달성된 RMS 이득 오류는 대략 스테이지와 미세 스테이지에서 각각 0.4dB 및 39dB입니다. 3.1GHz에서 달성된 RMS 위상 오류는 거친 스테이지의 경우 0.1°이고 미세 스테이지의 경우 37°입니다. 40GHz ~ 14GHz 내에서 모든 위상 조정 상태 내에서 측정된 반사 손실은 항상 -0.12dB보다 좋습니다. 제안된 위상 천이기의 코어 면적은 XNUMXmm에 불과하다.2 65nm CMOS 공정을 사용하여 공간 효율적입니다.
Jian PANG
Tokyo Institute of Technology
Xueting LUO
Tokyo Institute of Technology
Zheng LI
Tokyo Institute of Technology
Atsushi SHIRANE
Tokyo Institute of Technology
Kenichi OKADA
Tokyo Institute of Technology
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부
Jian PANG, Xueting LUO, Zheng LI, Atsushi SHIRANE, Kenichi OKADA, "A Compact and High-Resolution CMOS Switch-Type Phase Shifter Achieving 0.4-dB RMS Gain Error for 5G n260 Band" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 3, pp. 102-109, March 2022, doi: 10.1587/transele.2021ECP5002.
Abstract: This paper introduces a high-resolution and compact CMOS switch-type phase shifter (STPS) for the 5th generation mobile network (5G) n260 band. In this work, totally four coarse phase shifting stages and a high-resolution tuning stage are included. The coarse stages based on the bridged-T topology is capable of providing 202.5° phase coverage with a 22.5° tuning step. To further improve the phase shifting resolution, a compact fine-tuning stage covering 23° is also integrated with the coarse stages. Sub-degree phase shifting resolution is realized for supporting the fine beam-steering and high-accuracy phase calibration in the 5G new radio. Simplified phase control algorithm and suppressed insertion loss can also be maintained by the proposed fine-tuning stage. In the measurement, the achieved RMS gain errors at 39 GHz are 0.1 dB and 0.4 dB for the coarse stages and fine stage, respectively. The achieved RMS phase errors at 39 GHz are 3.1° for the coarse stages and 0.1° for the fine stage. Within 37 GHz to 40 GHz, the measured return loss within all phase-tuning states is always better than -14 dB. The proposed phase shifter consumes a core area of only 0.12mm2 with 65-nm CMOS process, which is area-efficient.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5002/_p
부
@ARTICLE{e105-c_3_102,
author={Jian PANG, Xueting LUO, Zheng LI, Atsushi SHIRANE, Kenichi OKADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Compact and High-Resolution CMOS Switch-Type Phase Shifter Achieving 0.4-dB RMS Gain Error for 5G n260 Band},
year={2022},
volume={E105-C},
number={3},
pages={102-109},
abstract={This paper introduces a high-resolution and compact CMOS switch-type phase shifter (STPS) for the 5th generation mobile network (5G) n260 band. In this work, totally four coarse phase shifting stages and a high-resolution tuning stage are included. The coarse stages based on the bridged-T topology is capable of providing 202.5° phase coverage with a 22.5° tuning step. To further improve the phase shifting resolution, a compact fine-tuning stage covering 23° is also integrated with the coarse stages. Sub-degree phase shifting resolution is realized for supporting the fine beam-steering and high-accuracy phase calibration in the 5G new radio. Simplified phase control algorithm and suppressed insertion loss can also be maintained by the proposed fine-tuning stage. In the measurement, the achieved RMS gain errors at 39 GHz are 0.1 dB and 0.4 dB for the coarse stages and fine stage, respectively. The achieved RMS phase errors at 39 GHz are 3.1° for the coarse stages and 0.1° for the fine stage. Within 37 GHz to 40 GHz, the measured return loss within all phase-tuning states is always better than -14 dB. The proposed phase shifter consumes a core area of only 0.12mm2 with 65-nm CMOS process, which is area-efficient.},
keywords={},
doi={10.1587/transele.2021ECP5002},
ISSN={1745-1353},
month={March},}
부
TY - JOUR
TI - A Compact and High-Resolution CMOS Switch-Type Phase Shifter Achieving 0.4-dB RMS Gain Error for 5G n260 Band
T2 - IEICE TRANSACTIONS on Electronics
SP - 102
EP - 109
AU - Jian PANG
AU - Xueting LUO
AU - Zheng LI
AU - Atsushi SHIRANE
AU - Kenichi OKADA
PY - 2022
DO - 10.1587/transele.2021ECP5002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2022
AB - This paper introduces a high-resolution and compact CMOS switch-type phase shifter (STPS) for the 5th generation mobile network (5G) n260 band. In this work, totally four coarse phase shifting stages and a high-resolution tuning stage are included. The coarse stages based on the bridged-T topology is capable of providing 202.5° phase coverage with a 22.5° tuning step. To further improve the phase shifting resolution, a compact fine-tuning stage covering 23° is also integrated with the coarse stages. Sub-degree phase shifting resolution is realized for supporting the fine beam-steering and high-accuracy phase calibration in the 5G new radio. Simplified phase control algorithm and suppressed insertion loss can also be maintained by the proposed fine-tuning stage. In the measurement, the achieved RMS gain errors at 39 GHz are 0.1 dB and 0.4 dB for the coarse stages and fine stage, respectively. The achieved RMS phase errors at 39 GHz are 3.1° for the coarse stages and 0.1° for the fine stage. Within 37 GHz to 40 GHz, the measured return loss within all phase-tuning states is always better than -14 dB. The proposed phase shifter consumes a core area of only 0.12mm2 with 65-nm CMOS process, which is area-efficient.
ER -