The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
SiC-MOSFET는 저손실, 고속 스위칭 장치로서 전력 전자 시스템에 점점 더 많이 구현되고 있습니다. SiC-MOSFET의 장점에도 불구하고 d가 크다.v/dt 또는 di/dt 전자기 간섭(EMI) 노이즈에 대한 두려움이 있습니다. 본 논문에서는 SiC-MOSFET 바디 다이오드의 턴오프로 인해 발생하는 링잉 진동과 서지 전압을 억제할 수 있는 간단하고 견고한 게이트 드라이버를 제안하고 시연합니다. 제안된 게이트 드라이버는 채널 누설 전류 방법론(CLC)을 활용하여 게이트-소스 전압을 높여 감쇠 효과를 향상시킵니다.VGS) 장치의 채널 누설 전류를 유도합니다. 게이트 드라이버는 CLC 작동 시작 타이밍을 자체 조정할 수 있으므로 스위칭 손실의 증가를 방지할 수 있습니다. 또한, 출력 전압은 VGS 작동 조건에 따라 승강 회로를 적극적으로 제어할 필요는 없습니다. 따라서 회로 토폴로지가 단순하고, 작동 조건에 관계없이 고정된 회로 매개변수로 링잉 발진을 쉽게 감쇠할 수 있어 스위칭 손실의 증가를 최소화할 수 있습니다. 제안된 게이트 드라이버의 효율성과 다양성은 이중 및 단일 펄스 스위칭 테스트를 통해 광범위한 작동 조건에 대해 실험적으로 검증되었습니다.
Hiroshi SUZUKI
Hitachi, Ltd.
Tsuyoshi FUNAKI
Osaka University
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Hiroshi SUZUKI, Tsuyoshi FUNAKI, "Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 12, pp. 750-760, December 2022, doi: 10.1587/transele.2021ECP5030.
Abstract: SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5030/_p
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@ARTICLE{e105-c_12_750,
author={Hiroshi SUZUKI, Tsuyoshi FUNAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver},
year={2022},
volume={E105-C},
number={12},
pages={750-760},
abstract={SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.},
keywords={},
doi={10.1587/transele.2021ECP5030},
ISSN={1745-1353},
month={December},}
부
TY - JOUR
TI - Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver
T2 - IEICE TRANSACTIONS on Electronics
SP - 750
EP - 760
AU - Hiroshi SUZUKI
AU - Tsuyoshi FUNAKI
PY - 2022
DO - 10.1587/transele.2021ECP5030
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2022
AB - SiC-MOSFETs are being increasingly implemented in power electronics systems as low-loss, fast switching devices. Despite the advantages of an SiC-MOSFET, its large dv/dt or di/dt has fear of electromagnetic interference (EMI) noise. This paper proposes and demonstrates a simple and robust gate driver that can suppress ringing oscillation and surge voltage induced by the turn-off of the SiC-MOSFET body diode. The proposed gate driver utilizes the channel leakage current methodology (CLC) to enhance the damping effect by elevating the gate-source voltage (VGS) and inducing the channel leakage current in the device. The gate driver can self-adjust the timing of initiating CLC operation, which avoids an increase in switching loss. Additionally, the output voltage of the VGS elevation circuit does not need to be actively controlled in accordance with the operating conditions. Thus, the circuit topology is simple, and ringing oscillation can be easily attenuated with fixed circuit parameters regardless of operating conditions, minimizing the increase in switching loss. The effectiveness and versatility of proposed gate driver were experimentally validated for a wide range of operating conditions by double and single pulse switching tests.
ER -