The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
빠른 스위칭 속도, 낮은 전력 소비 및 우수한 안정성은 비휘발성 전가산기(NV-FA)를 만드는 스핀 전달 토크 지원 전압 제어 자기 이방성 자기 터널 접합(STT 지원 VCMA-MTJ)의 중요한 특성 중 일부입니다. 이를 기반으로 사물 인터넷에 매력적입니다. 그러나 STT 지원 VCMA-MTJ 및 NV-FA의 성능에 대한 프로세스 변화의 영향은 STT 지원 VCMA-MTJ의 축소 및 칩 통합 개선으로 인해 점점 더 분명해질 것입니다. 본 논문에서는 자화 역학과 막 성장 공정 및 에칭 공정의 공정 변화를 기반으로 STT 지원 VCMA-MTJ의 보다 정확한 전기 모델을 구축했습니다. 특히 막 두께가 0.7nm로 감소함에 따라 쓰기 전압은 0.9V로 감소한다. 자유층 두께 변화의 영향(γtf) 및 산화물층 두께 변화(γTOX) 상태 스위칭에 대한 터널 자기저항비 변화(β)가 감지 마진에 미치는 영향(SM)에 대해 자세히 연구했습니다. 위의 프로세스 변화가 가우스 분포를 따른다는 점을 고려하면 몬테카를로 시뮬레이션은 NV-FA의 쓰기 및 출력 동작에 대한 프로세스 변화의 영향을 연구하는 데 사용됩니다. 결과는 STT 지원 VCMA-MTJ의 상태가 -0.3%≤γ에서 전환될 수 있음을 보여줍니다.tf≤6% 또는 -23%≤γTOX≤0.2 %. SM β가 16.0에서 0%로 증가하면 30% 감소합니다. NV-FA에 '0'을 쓰는 오류율을 증가시켜 줄일 수 있습니다. Vb1 또는 긍정적인 증가 Vb2. '1'을 쓰는 오류율은 다음을 증가시켜 줄일 수 있습니다. Vb1 또는 부정적인 감소 Vb2. 출력 오류율의 감소는 구동 전압(Vdd).
Dongyue JIN
Beijing University of Technology
Luming CAO
Beijing University of Technology
You WANG
Faulty of Hefei Innovation Research Institute, Beihang University
Xiaoxue JIA
Beijing University of Technology
Yongan PAN
Beijing University of Technology
Yuxin ZHOU
Beijing University of Technology
Xin LEI
Beijing University of Technology
Yuanyuan LIU
Beijing University of Technology
Yingqi YANG
Beijing University of Technology
Wanrong ZHANG
Beijing University of Technology
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Dongyue JIN, Luming CAO, You WANG, Xiaoxue JIA, Yongan PAN, Yuxin ZHOU, Xin LEI, Yuanyuan LIU, Yingqi YANG, Wanrong ZHANG, "Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 11, pp. 704-711, November 2022, doi: 10.1587/transele.2021ECP5061.
Abstract: Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5061/_p
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@ARTICLE{e105-c_11_704,
author={Dongyue JIN, Luming CAO, You WANG, Xiaoxue JIA, Yongan PAN, Yuxin ZHOU, Xin LEI, Yuanyuan LIU, Yingqi YANG, Wanrong ZHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA},
year={2022},
volume={E105-C},
number={11},
pages={704-711},
abstract={Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).},
keywords={},
doi={10.1587/transele.2021ECP5061},
ISSN={1745-1353},
month={November},}
부
TY - JOUR
TI - Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA
T2 - IEICE TRANSACTIONS on Electronics
SP - 704
EP - 711
AU - Dongyue JIN
AU - Luming CAO
AU - You WANG
AU - Xiaoxue JIA
AU - Yongan PAN
AU - Yuxin ZHOU
AU - Xin LEI
AU - Yuanyuan LIU
AU - Yingqi YANG
AU - Wanrong ZHANG
PY - 2022
DO - 10.1587/transele.2021ECP5061
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2022
AB - Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
ER -