The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
160°C에서 AlN의 저온 증착은 트리메틸 알루미늄(TMA)과 플라즈마 여기 Ar 희석 암모니아의 NH 라디칼을 사용하여 검사됩니다. 증착을 위해 반응 챔버에서 분리된 플라즈마 튜브를 사용하여 고속 종 및 UV 광자의 직접적인 영향 없이 성장 표면에 중성 NH 라디칼을 도입합니다. 이는 샘플 표면의 플라즈마 손상을 억제하는 데 효과적일 수 있습니다. . NH 라디칼 생성을 최대화하기 위해 NH3 Ar 혼합비는 플라즈마 광방출 분광법에 의해 최적화됩니다. TMA 및 NH 라디칼 조사의 포화 상태를 결정하려면 원위치 다중 내부 반사 기하학을 이용한 IR 흡수 분광법(IRAS)의 표면 관찰이 활용됩니다. 저온 AlN 증착은 IRAS 실험에 의해 조건이 결정되는 TMA 및 NH 라디칼 노출로 수행됩니다. 분광 엘립소메트리(spectroscopic ellipsometry)는 Si 샘플의 전면과 후면에서 측정된 사이클당 성장이 0.39~0.41nm/사이클로 동일한 범위에 있는 만능 표면 증착을 나타냅니다. 이를 감소시키는 방법에 대해 논의하고 있지만 증착된 막에는 C, O, N의 불순물이 포함되어 있는 것이 확인되었습니다. X선 회절은 AlN(100), (002) 및 (101)의 결정상을 갖는 AlN 다결정 증착을 나타냅니다. 본 논문에서는 TMA 흡착 및 질화의 포화 곡선으로부터 이들의 화학 반응을 논의합니다. 본 논문에서는 저온 AlN 증착의 가능성에 대해 논의합니다.
Kentaro SAITO
Yamagata University
Kazuki YOSHIDA
Yamagata University
Masanori MIURA
Yamagata University
Kensaku KANOMATA
Yamagata University
Bashir AHMMAD
Yamagata University
Shigeru KUBOTA
Yamagata University
Fumihiko HIROSE
Yamagata University
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Kentaro SAITO, Kazuki YOSHIDA, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, "Low-Temperature Atomic Layer Deposition of AlN Using Trimethyl Aluminum and Plasma Excited Ar Diluted Ammonia" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 596-603, October 2022, doi: 10.1587/transele.2021FUP0001.
Abstract: The low temperature deposition of AlN at 160 °C is examined by using trimethyl aluminum (TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a plasma tube separated from the reaction chamber is used to introduce the neutral NH radicals on the growing surface without the direct impacts of high-speed species and UV photons, which might be effective in suppressing the plasma damage to the sample surfaces. To maximize the NH radical generation, the NH3 and Ar mixing ratio is optimized by plasma optical emission spectroscopy. To determine the saturated condition of TMA and NH radical irradiations, an in-situ surface observation of IR absorption spectroscopy (IRAS) with a multiple internal reflection geometry is utilized. The low temperature AlN deposition is performed with the TMA and NH radical exposures whose conditions are determined by the IRAS experiment. The spectroscopic ellipsometry indicates the all-round surface deposition in which the growth per cycles measured from front and backside surfaces of the Si sample are of the same range from 0.39∼0.41nm/cycle. It is confirmed that the deposited film contains impurities of C, O, N although we discuss the method to decrease them. X-ray diffraction suggests the AlN polycrystal deposition with crystal phases of AlN (100), (002) and (101). From the saturation curves of TMA adsorption and its nitridation, their chemical reactions are discussed in this paper. In the present paper, we discuss the possibility of the low temperature AlN deposition.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0001/_p
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@ARTICLE{e105-c_10_596,
author={Kentaro SAITO, Kazuki YOSHIDA, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Atomic Layer Deposition of AlN Using Trimethyl Aluminum and Plasma Excited Ar Diluted Ammonia},
year={2022},
volume={E105-C},
number={10},
pages={596-603},
abstract={The low temperature deposition of AlN at 160 °C is examined by using trimethyl aluminum (TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a plasma tube separated from the reaction chamber is used to introduce the neutral NH radicals on the growing surface without the direct impacts of high-speed species and UV photons, which might be effective in suppressing the plasma damage to the sample surfaces. To maximize the NH radical generation, the NH3 and Ar mixing ratio is optimized by plasma optical emission spectroscopy. To determine the saturated condition of TMA and NH radical irradiations, an in-situ surface observation of IR absorption spectroscopy (IRAS) with a multiple internal reflection geometry is utilized. The low temperature AlN deposition is performed with the TMA and NH radical exposures whose conditions are determined by the IRAS experiment. The spectroscopic ellipsometry indicates the all-round surface deposition in which the growth per cycles measured from front and backside surfaces of the Si sample are of the same range from 0.39∼0.41nm/cycle. It is confirmed that the deposited film contains impurities of C, O, N although we discuss the method to decrease them. X-ray diffraction suggests the AlN polycrystal deposition with crystal phases of AlN (100), (002) and (101). From the saturation curves of TMA adsorption and its nitridation, their chemical reactions are discussed in this paper. In the present paper, we discuss the possibility of the low temperature AlN deposition.},
keywords={},
doi={10.1587/transele.2021FUP0001},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - Low-Temperature Atomic Layer Deposition of AlN Using Trimethyl Aluminum and Plasma Excited Ar Diluted Ammonia
T2 - IEICE TRANSACTIONS on Electronics
SP - 596
EP - 603
AU - Kentaro SAITO
AU - Kazuki YOSHIDA
AU - Masanori MIURA
AU - Kensaku KANOMATA
AU - Bashir AHMMAD
AU - Shigeru KUBOTA
AU - Fumihiko HIROSE
PY - 2022
DO - 10.1587/transele.2021FUP0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - The low temperature deposition of AlN at 160 °C is examined by using trimethyl aluminum (TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a plasma tube separated from the reaction chamber is used to introduce the neutral NH radicals on the growing surface without the direct impacts of high-speed species and UV photons, which might be effective in suppressing the plasma damage to the sample surfaces. To maximize the NH radical generation, the NH3 and Ar mixing ratio is optimized by plasma optical emission spectroscopy. To determine the saturated condition of TMA and NH radical irradiations, an in-situ surface observation of IR absorption spectroscopy (IRAS) with a multiple internal reflection geometry is utilized. The low temperature AlN deposition is performed with the TMA and NH radical exposures whose conditions are determined by the IRAS experiment. The spectroscopic ellipsometry indicates the all-round surface deposition in which the growth per cycles measured from front and backside surfaces of the Si sample are of the same range from 0.39∼0.41nm/cycle. It is confirmed that the deposited film contains impurities of C, O, N although we discuss the method to decrease them. X-ray diffraction suggests the AlN polycrystal deposition with crystal phases of AlN (100), (002) and (101). From the saturation curves of TMA adsorption and its nitridation, their chemical reactions are discussed in this paper. In the present paper, we discuss the possibility of the low temperature AlN deposition.
ER -