The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 연구에서는 Ar/N의 효과2- LaB의 플라즈마 스퍼터링 가스 압력xNy 비정질 루브렌(α-루브렌) 패시베이션 층을 갖춘 펜타센 기반 플로팅 게이트 메모리에 대해 터널 및 블록 층을 조사했습니다. α-루브렌 보호층이 메모리 특성에 미치는 영향을 조사했습니다. 펜타센 기반의 금속/절연체/금속/절연체/반도체(MIMIS) 다이오드와 유기 전계 효과 트랜지스터(OFET)는 N 도핑된 LaB를 활용하여 제작되었습니다.6 금속층과 LaBxNy 어닐링 온도 200°C에서 α-루브렌 보호층을 갖춘 절연체°C. MIMIS 다이오드의 경우 누설전류밀도와 EOT(Equivalent Oxide Thickness)가 1.2×10에서 감소하였다.-2 A/센티미터2 1.1×10까지-7 A/센티미터2 스퍼터링 가스 압력을 3.5 Pa에서 3.1 Pa로 줄임으로써 각각 0.47 nm에서 0.19 nm로 증가했습니다. α-루브렌 패시베이션 층을 갖춘 플로팅 게이트형 OFET의 경우 포화 이동도를 통해 0.68 V의 더 큰 메모리 창을 얻었습니다. 2.2×10-2 cm2α-루브렌 패시베이션 층이 없는 장치와 비교하여 /(V·s) 및 199mV/dec의 임계값 이하 스윙.
Eun-Ki HONG
Tokyo Institute of Technology
Kyung Eun PARK
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
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부
Eun-Ki HONG, Kyung Eun PARK, Shun-ichiro OHMI, "Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 589-595, October 2022, doi: 10.1587/transele.2021FUP0005.
Abstract: In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0005/_p
부
@ARTICLE{e105-c_10_589,
author={Eun-Ki HONG, Kyung Eun PARK, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer},
year={2022},
volume={E105-C},
number={10},
pages={589-595},
abstract={In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.},
keywords={},
doi={10.1587/transele.2021FUP0005},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 589
EP - 595
AU - Eun-Ki HONG
AU - Kyung Eun PARK
AU - Shun-ichiro OHMI
PY - 2022
DO - 10.1587/transele.2021FUP0005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.
ER -