The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
근적외선 파장의 Si/CaF를 설계했습니다.2 DFB 양자 캐스케이드 레이저를 이용하여 전파 모드, 게인, Si 양자 우물의 산란 시간 및 임계 전류 밀도 분석을 통해 단일 모드 레이저 발진 가능성을 조사했습니다. 도파관 및 공진기로는 Si/CaF를 이용한 슬래브형 도파관 구조2 SiO2로 샌드위치된 활성층2 Si(111) 기판 위의 격자 구조와 n-Si 전도층의 격자 구조를 가정했습니다. 광전파 모드 분석 결과, λ/4 시프트된 브래그 도파관 구조를 가정하여 설계 파장 1.70μm에서 단일 수직 및 수평 TM 모드 전파가 가능함을 알 수 있었다. 또한, 활성층의 설계가 제안되었으며, 전류주입능력은 대략 25.1kA/cm로 추정된다.2이는 필요한 임계 전류 밀도인 1.4kA/cm보다 큽니다.2 산란 시간, 밀도 역전, 양자 캐스케이드 레이저 이득 및 브래그 도파관 결합 이론의 분석 결과를 결합하여 계산됩니다. 결과는 단일 모드 레이저 진동의 가능성을 강력하게 나타냅니다.
Gensai TEI
Tokyo Institute of Technology
Long LIU
Tokyo Institute of Technology
Masahiro WATANABE
Tokyo Institute of Technology
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Gensai TEI, Long LIU, Masahiro WATANABE, "Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 5, pp. 157-164, May 2023, doi: 10.1587/transele.2022ECP5045.
Abstract: We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022ECP5045/_p
부
@ARTICLE{e106-c_5_157,
author={Gensai TEI, Long LIU, Masahiro WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics},
year={2023},
volume={E106-C},
number={5},
pages={157-164},
abstract={We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.},
keywords={},
doi={10.1587/transele.2022ECP5045},
ISSN={1745-1353},
month={May},}
부
TY - JOUR
TI - Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics
T2 - IEICE TRANSACTIONS on Electronics
SP - 157
EP - 164
AU - Gensai TEI
AU - Long LIU
AU - Masahiro WATANABE
PY - 2023
DO - 10.1587/transele.2022ECP5045
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2023
AB - We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.
ER -