The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 수직형 SSBR과 기존 TMBS의 장점을 결합한 새로운 트렌치 MOS 배리어 쇼트키 접촉 슈퍼 배리어 정류기(TMB-SSBR)를 제안한다. 동작 메커니즘과 시뮬레이션 검증을 제시합니다. TMB-SSBR은 TMBS 메사에 있는 쇼트키 다이오드를 대체하는 수직 SSBR 그리드가 있는 MOS 트렌치로 구성됩니다. 제안된 TMB-SSBR의 상단 pn 접합으로 인해 이미지 힘 장벽 저하 효과가 제거되고 MOS 트렌치에 의한 핀칭 오프 전기장 효과가 약화되어 메사 표면 전기장이 기존보다 훨씬 커집니다. TMBS. 따라서 메사 폭이 확대되고 n-드리프트 농도가 약간 증가하여 비온 저항이 낮아지고 역방향 누설 전류와 순방향 전압 간의 균형이 양호해집니다. 기존 TMBS와 비교하여 시뮬레이션 결과에 따르면 실온에서 동일한 항복 전압 124V와 동일한 역방향 누설 전류를 사용하는 경우 TMB-SSBR은 성능 지수(FOM, V와 동일)가 증가합니다.B2/R에, sp)가 25.5% 감소하고, 33.3K 온도에서 역누설이 423% 감소합니다. SBD에서 TMBS로의 발전과 마찬가지로, TMBS에서 TMB-SSBR로의 발전 역시 눈에 띄는 성능 향상을 가져옵니다.
Peijian ZHANG
Science and Technology on Analog Integrated Circuit Laboratory
Kunfeng ZHU
Chongqing University
Wensuo CHEN
Chongqing University
다이오드, 트렌치 MOS 장벽, 쇼트 키, 슈퍼 장벽, 안개
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부
Peijian ZHANG, Kunfeng ZHU, Wensuo CHEN, "A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier" in IEICE TRANSACTIONS on Electronics,
vol. E107-C, no. 1, pp. 12-17, January 2024, doi: 10.1587/transele.2022ECP5059.
Abstract: In this paper, a novel trench MOS barrier Schottky contact super barrier rectifier (TMB-SSBR) is proposed by combining the advantages of vertical SSBR and conventional TMBS. The operation mechanism and simulation verification are presented. TMB-SSBR consists of MOS trenches with a vertical SSBR grid which replaces the Schottky diode in the mesa of a TMBS. Due to the presence of top p-n junction in the proposed TMB-SSBR, the image force barrier lowering effect is eliminated, the pinching off electric field effect by MOS trenches is weakened, so that the mesa surface electric field is much larger than that in conventional TMBS. Therefore, the mesa width is enlarged and the n-drift concentration is slightly increased, which results in a low specific on-resistance and a good tradeoff between reverse leakage currents and forward voltages. Compared to a conventional TMBS, simulation results show that, with the same breakdown voltage of 124V and the same reverse leakage current at room temperature, TMB-SSBR increases the figure of merit (FOM, equates to VB2/Ron, sp) by 25.5%, and decreases the reverse leakage by 33.3% at the temperature of 423K. Just like the development from SBD to TMBS, from TMBS to TMB-SSBR also brings obvious improvement of performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022ECP5059/_p
부
@ARTICLE{e107-c_1_12,
author={Peijian ZHANG, Kunfeng ZHU, Wensuo CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier},
year={2024},
volume={E107-C},
number={1},
pages={12-17},
abstract={In this paper, a novel trench MOS barrier Schottky contact super barrier rectifier (TMB-SSBR) is proposed by combining the advantages of vertical SSBR and conventional TMBS. The operation mechanism and simulation verification are presented. TMB-SSBR consists of MOS trenches with a vertical SSBR grid which replaces the Schottky diode in the mesa of a TMBS. Due to the presence of top p-n junction in the proposed TMB-SSBR, the image force barrier lowering effect is eliminated, the pinching off electric field effect by MOS trenches is weakened, so that the mesa surface electric field is much larger than that in conventional TMBS. Therefore, the mesa width is enlarged and the n-drift concentration is slightly increased, which results in a low specific on-resistance and a good tradeoff between reverse leakage currents and forward voltages. Compared to a conventional TMBS, simulation results show that, with the same breakdown voltage of 124V and the same reverse leakage current at room temperature, TMB-SSBR increases the figure of merit (FOM, equates to VB2/Ron, sp) by 25.5%, and decreases the reverse leakage by 33.3% at the temperature of 423K. Just like the development from SBD to TMBS, from TMBS to TMB-SSBR also brings obvious improvement of performance.},
keywords={},
doi={10.1587/transele.2022ECP5059},
ISSN={1745-1353},
month={January},}
부
TY - JOUR
TI - A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 12
EP - 17
AU - Peijian ZHANG
AU - Kunfeng ZHU
AU - Wensuo CHEN
PY - 2024
DO - 10.1587/transele.2022ECP5059
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E107-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2024
AB - In this paper, a novel trench MOS barrier Schottky contact super barrier rectifier (TMB-SSBR) is proposed by combining the advantages of vertical SSBR and conventional TMBS. The operation mechanism and simulation verification are presented. TMB-SSBR consists of MOS trenches with a vertical SSBR grid which replaces the Schottky diode in the mesa of a TMBS. Due to the presence of top p-n junction in the proposed TMB-SSBR, the image force barrier lowering effect is eliminated, the pinching off electric field effect by MOS trenches is weakened, so that the mesa surface electric field is much larger than that in conventional TMBS. Therefore, the mesa width is enlarged and the n-drift concentration is slightly increased, which results in a low specific on-resistance and a good tradeoff between reverse leakage currents and forward voltages. Compared to a conventional TMBS, simulation results show that, with the same breakdown voltage of 124V and the same reverse leakage current at room temperature, TMB-SSBR increases the figure of merit (FOM, equates to VB2/Ron, sp) by 25.5%, and decreases the reverse leakage by 33.3% at the temperature of 423K. Just like the development from SBD to TMBS, from TMBS to TMB-SSBR also brings obvious improvement of performance.
ER -