The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 연구에서는 교차 결합 커패시턴스 중화 기술의 AM-PM 보상에 대해 논의합니다. 씨gd 중성화는 AM-AM 특성의 변화를 무시할 수 있는 전력 증폭기의 AM-PM 보상으로 이어집니다. AM-PM 보상은 회로 분석 및 측정을 통해 확인되었습니다. 공식 분석에서는 AM-PM 보상이 다음을 통해 도출될 수 있음을 보여주었습니다. gm 커패시턴스 중화를 통해 입력 전력에 대한 변화. GaN 고전자 이동도 트랜지스터를 사용하여 커패시턴스 중화 기능을 갖춘 차동 전력 증폭기를 제작했습니다. 제작된 차동전력증폭기의 AM-PM 특성은 17.7GHz에서 측정되었다. 출력 전력 22dBm에서 정전용량 중화 기능이 없는 단상 전력 증폭기와 비교하여 AM-PM이 35° 감소한 것으로 나타났습니다.
Takuma TORII
Mitsubishi Electric Corporation
Masaomi TSURU
Mitsubishi Electric Corporation
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부
Takuma TORII, Masaomi TSURU, "An AM-PM Compensation of Cross-Coupled Capacitance Neutralization Technique in a Differential Power Amplifier" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 492-500, October 2022, doi: 10.1587/transele.2022MMP0003.
Abstract: In this study, AM-PM compensation of the cross-coupled capacitance neutralization technique is discussed. Cgd neutralization leads to AM-PM compensation of a power amplifier with negligible change of AM-AM characteristics. AM-PM compensation was confirmed via circuit analysis and measurements. The formulation analysis showed that AM-PM compensation can be derived via gm variation against input power with capacitance neutralization. A differential power amplifier with capacitance neutralization was fabricated with GaN high-electron-mobility transistors. The AM-PM characteristic of the fabricated differential power amplifier was measured at 17.7 GHz. It showed AM-PM reduction of 22° at compared to a single-phase power amplifier without capacitance neutralization at output power of 35 dBm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022MMP0003/_p
부
@ARTICLE{e105-c_10_492,
author={Takuma TORII, Masaomi TSURU, },
journal={IEICE TRANSACTIONS on Electronics},
title={An AM-PM Compensation of Cross-Coupled Capacitance Neutralization Technique in a Differential Power Amplifier},
year={2022},
volume={E105-C},
number={10},
pages={492-500},
abstract={In this study, AM-PM compensation of the cross-coupled capacitance neutralization technique is discussed. Cgd neutralization leads to AM-PM compensation of a power amplifier with negligible change of AM-AM characteristics. AM-PM compensation was confirmed via circuit analysis and measurements. The formulation analysis showed that AM-PM compensation can be derived via gm variation against input power with capacitance neutralization. A differential power amplifier with capacitance neutralization was fabricated with GaN high-electron-mobility transistors. The AM-PM characteristic of the fabricated differential power amplifier was measured at 17.7 GHz. It showed AM-PM reduction of 22° at compared to a single-phase power amplifier without capacitance neutralization at output power of 35 dBm.},
keywords={},
doi={10.1587/transele.2022MMP0003},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - An AM-PM Compensation of Cross-Coupled Capacitance Neutralization Technique in a Differential Power Amplifier
T2 - IEICE TRANSACTIONS on Electronics
SP - 492
EP - 500
AU - Takuma TORII
AU - Masaomi TSURU
PY - 2022
DO - 10.1587/transele.2022MMP0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - In this study, AM-PM compensation of the cross-coupled capacitance neutralization technique is discussed. Cgd neutralization leads to AM-PM compensation of a power amplifier with negligible change of AM-AM characteristics. AM-PM compensation was confirmed via circuit analysis and measurements. The formulation analysis showed that AM-PM compensation can be derived via gm variation against input power with capacitance neutralization. A differential power amplifier with capacitance neutralization was fabricated with GaN high-electron-mobility transistors. The AM-PM characteristic of the fabricated differential power amplifier was measured at 17.7 GHz. It showed AM-PM reduction of 22° at compared to a single-phase power amplifier without capacitance neutralization at output power of 35 dBm.
ER -