The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
펜타센 및 삼산화 몰리브덴(MoO)을 사용하여 유기 전계 효과 트랜지스터의 온/오프 비율 개선3) 층은 불연속적인 MoO의 제조를 통해 시도되었습니다.3 메쉬 마스크를 사용한 레이어. 세 가지 종류의 장치를 준비했습니다. 장치 A는 기존의 상단 접촉 구조를 가지고 있었습니다. n-타입 Si 웨이퍼와 200nm 두께의 SiO2 그 위에 70nm 두께의 펜타센 필름과 30nm 두께의 Au 상부 전극층을 증착했습니다. 장치 B와 C는 장치 A와 유사한 구조를 가지고 있지만 연속 및 불연속 MoO를 받았습니다.3 레이어. 장치 B의 오프 전류는 현저히 높았습니다. 대조적으로, 장치 C의 오프 전류는 감소되었으며 MoO의 분리에 따라 달라졌습니다.3 층. MoO가 없는 영역의 저항이 높은 것으로 추론되었습니다.3 오프 전류 감소에 기여했습니다.
Takumi KOBAYASHI
Niigata Univ.
Masahiro MINAGAWA
Nagaoka Coll.
Akira BABA
Niigata Univ.
Keizo KATO
Niigata Univ.
Kazunari SHINBO
Nagaoka Coll.
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Takumi KOBAYASHI, Masahiro MINAGAWA, Akira BABA, Keizo KATO, Kazunari SHINBO, "On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 6, pp. 214-219, June 2023, doi: 10.1587/transele.2022OMP0001.
Abstract: Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022OMP0001/_p
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@ARTICLE{e106-c_6_214,
author={Takumi KOBAYASHI, Masahiro MINAGAWA, Akira BABA, Keizo KATO, Kazunari SHINBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer},
year={2023},
volume={E106-C},
number={6},
pages={214-219},
abstract={Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.},
keywords={},
doi={10.1587/transele.2022OMP0001},
ISSN={1745-1353},
month={June},}
부
TY - JOUR
TI - On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 214
EP - 219
AU - Takumi KOBAYASHI
AU - Masahiro MINAGAWA
AU - Akira BABA
AU - Keizo KATO
AU - Kazunari SHINBO
PY - 2023
DO - 10.1587/transele.2022OMP0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2023
AB - Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.
ER -