The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 무작위로 배치된 전도성 나노입자의 전기적 특성, 즉 저항 및 쿨롱 차단 임계값을 수치적으로 시뮬레이션했습니다. 시뮬레이션에서는 인접한 입자-입자 연결과 입자-전극 연결 사이에 터널 접합이 형성되는 것으로 가정했습니다. 100×100 그리드의 삼각형 평면 위에 드레인, 소스, 게이트의 XNUMX개 전극이 정의되었습니다. 전도성 입자를 무작위로 배치한 후, 게이트 전극을 분리한 상태에서 드레인과 소스 전극 사이의 연결을 평가했습니다. 저항은 SPICE형 시뮬레이터를 사용하여 구한 반면, 쿨롱 차단 임계값은 Monte-Carlo 시뮬레이터를 사용하여 시뮬레이션한 전류-전압 특성으로부터 결정되었습니다. 저항과 문턱 전압 사이의 강한 선형 상관관계가 확인되었으며 이는 균일한 XNUMX차원 배열에 대한 결과와 일치했습니다.
Yoshinao MIZUGAKI
University of Electro-Communications
Hiroshi SHIMADA
University of Electro-Communications
Ayumi HIRANO-IWATA
Tohoku Univeristy
Fumihiko HIROSE
Yamagata University
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Yoshinao MIZUGAKI, Hiroshi SHIMADA, Ayumi HIRANO-IWATA, Fumihiko HIROSE, "Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 10, pp. 836-839, October 2018, doi: 10.1587/transele.E101.C.836.
Abstract: We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.836/_p
부
@ARTICLE{e101-c_10_836,
author={Yoshinao MIZUGAKI, Hiroshi SHIMADA, Ayumi HIRANO-IWATA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles},
year={2018},
volume={E101-C},
number={10},
pages={836-839},
abstract={We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.},
keywords={},
doi={10.1587/transele.E101.C.836},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles
T2 - IEICE TRANSACTIONS on Electronics
SP - 836
EP - 839
AU - Yoshinao MIZUGAKI
AU - Hiroshi SHIMADA
AU - Ayumi HIRANO-IWATA
AU - Fumihiko HIROSE
PY - 2018
DO - 10.1587/transele.E101.C.836
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2018
AB - We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
ER -