The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
조회수
96
우리는 Al-Zn-Sn-O(AZTO)라는 새로운 산화물 물질을 활성층으로 사용하여 투명한 하단 게이트 및 상단 게이트 TFT를 제작했습니다. AZTO 활성층은 실온에서 RF 마그네트론 스퍼터링에 의해 증착되었습니다. 우리의 새로운 TFT는 사후 어닐링 없이도 좋은 TFT 성능을 보여주었습니다. 사후 어닐링을 통해 전계 효과 이동도와 임계값 이하 스윙이 향상되었으며 SnO를 사용하면 이동도가 증가했습니다.2 콘텐츠. AZTO TFT(약 4mol% AlOx, 66mol% ZnO 및 30mol% SnO)2)는 10.3cm의 이동성을 나타냈습니다.2/Vs, 켜기 전압 0.4V, 하위 임계값 스윙 0.6V/dec, 켜기/끄기 비율 109. 하단 게이트 AZTO TFT는 좋은 전기적 성능을 보였지만 바이어스 안정성은 상대적으로 나빴습니다. 탑 게이트 AZTO TFT에서는 바이어스 안정성이 크게 향상되었습니다. Top Gate AZTO TFT Array로 구성된 Back Plane을 이용하여 투명 AMOLED Panel 제작에 성공하였습니다.
Doo-Hee CHO
Sang-Hee Ko PARK
Shinhyuk YANG
Chunwon BYUN
Min Ki RYU
Jeong-Ik LEE
Chi-Sun HWANG
Sung Min YOON
Hye Yong CHU
Kyoung Ik CHO
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Doo-Hee CHO, Sang-Hee Ko PARK, Shinhyuk YANG, Chunwon BYUN, Min Ki RYU, Jeong-Ik LEE, Chi-Sun HWANG, Sung Min YOON, Hye Yong CHU, Kyoung Ik CHO, "Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 11, pp. 1340-1346, November 2009, doi: 10.1587/transele.E92.C.1340.
Abstract: We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1340/_p
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@ARTICLE{e92-c_11_1340,
author={Doo-Hee CHO, Sang-Hee Ko PARK, Shinhyuk YANG, Chunwon BYUN, Min Ki RYU, Jeong-Ik LEE, Chi-Sun HWANG, Sung Min YOON, Hye Yong CHU, Kyoung Ik CHO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED},
year={2009},
volume={E92-C},
number={11},
pages={1340-1346},
abstract={We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.},
keywords={},
doi={10.1587/transele.E92.C.1340},
ISSN={1745-1353},
month={November},}
부
TY - JOUR
TI - Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
T2 - IEICE TRANSACTIONS on Electronics
SP - 1340
EP - 1346
AU - Doo-Hee CHO
AU - Sang-Hee Ko PARK
AU - Shinhyuk YANG
AU - Chunwon BYUN
AU - Min Ki RYU
AU - Jeong-Ik LEE
AU - Chi-Sun HWANG
AU - Sung Min YOON
AU - Hye Yong CHU
AU - Kyoung Ik CHO
PY - 2009
DO - 10.1587/transele.E92.C.1340
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2009
AB - We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.
ER -