The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
P3HT/알루미늄 유기/무기 이종접합 다이오드의 전기적 특성을 VI 및 CV(Capacitance-Voltage) 측정으로 조사하였다. VI 측정에서는 쇼트키 다이오드 고유의 전류 정류가 나타났으며, 이는 유기 유연성 회로에서 정류 다이오드로서의 가용성을 시사합니다. CV 분석은 역방향 바이어스 조건에서 P3HT 필름에 공핍층이 생성되었다는 사실을 나타냅니다. 플랫 밴드 전압 분석은 계면 전하가 다이오드의 내장 전위에 영향을 미친다는 것을 보여줍니다. Al/P3HT 이종접합은 정류 다이오드뿐만 아니라 접합형 전계 효과 또는 정적 유도 트랜지스터용 게이트 접합으로도 사용이 가능합니다.
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Fumihiko HIROSE, Yasuo KIMURA, Michio NIWANO, "P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1475-1478, December 2009, doi: 10.1587/transele.E92.C.1475.
Abstract: Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1475/_p
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@ARTICLE{e92-c_12_1475,
author={Fumihiko HIROSE, Yasuo KIMURA, Michio NIWANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements},
year={2009},
volume={E92-C},
number={12},
pages={1475-1478},
abstract={Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.},
keywords={},
doi={10.1587/transele.E92.C.1475},
ISSN={1745-1353},
month={December},}
부
TY - JOUR
TI - P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements
T2 - IEICE TRANSACTIONS on Electronics
SP - 1475
EP - 1478
AU - Fumihiko HIROSE
AU - Yasuo KIMURA
AU - Michio NIWANO
PY - 2009
DO - 10.1587/transele.E92.C.1475
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Electrical characteristics of P3HT/Aluminum organic/ inorganic heterojunction diodes were investigated V-I and capacitance-voltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.
ER -