The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 단채널 MOSFET에 대한 소형 채널 열 잡음 모델을 제시하고 RFIC(무선 주파수 집적 회로) 설계에 적용합니다. 속도 포화 효과(VSE), 채널 길이 변조(CLM), 캐리어 가열 효과(CHE)와 같은 다양한 단채널 효과 간의 관계 분석을 기반으로 채널 열 잡음에 대한 컴팩트 모델을 다음과 같이 분석적으로 도출했습니다. 간단한 형태. 회로 시뮬레이터에서 MOSFET의 잡음 특성을 시뮬레이션하기 위해 적절한 방법론이 제안됩니다. 사용된 소형 잡음 모델은 각각 65 nm 및 130 nm CMOS 기술을 사용하여 장치 및 회로 수준에서 측정된 데이터와 시뮬레이션 결과를 비교하여 검증됩니다.
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부
Jongwook JEON, Ickhyun SONG, Jong Duk LEE, Byung-Gook PARK, Hyungcheol SHIN, "Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 627-634, May 2009, doi: 10.1587/transele.E92.C.627.
Abstract: In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.627/_p
부
@ARTICLE{e92-c_5_627,
author={Jongwook JEON, Ickhyun SONG, Jong Duk LEE, Byung-Gook PARK, Hyungcheol SHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design},
year={2009},
volume={E92-C},
number={5},
pages={627-634},
abstract={In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.},
keywords={},
doi={10.1587/transele.E92.C.627},
ISSN={1745-1353},
month={May},}
부
TY - JOUR
TI - Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 627
EP - 634
AU - Jongwook JEON
AU - Ickhyun SONG
AU - Jong Duk LEE
AU - Byung-Gook PARK
AU - Hyungcheol SHIN
PY - 2009
DO - 10.1587/transele.E92.C.627
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.
ER -