The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
원자적으로 평평한 실리콘 표면에 대한 원자력 현미경의 데이터 분석 기술이 개발되었습니다. 원자 테라스와 계단으로 구성된 원자적으로 평평한 실리콘 표면은 100°C의 순수 아르곤 분위기에서 어닐링하여 (200) 방향 1,200mm 직경 웨이퍼에서 얻어집니다.
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Masahiro KONDA, Akinobu TERAMOTO, Tomoyuki SUWA, Rihito KURODA, Tadahiro OHMI, "Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 664-670, May 2009, doi: 10.1587/transele.E92.C.664.
Abstract: A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.664/_p
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@ARTICLE{e92-c_5_664,
author={Masahiro KONDA, Akinobu TERAMOTO, Tomoyuki SUWA, Rihito KURODA, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces},
year={2009},
volume={E92-C},
number={5},
pages={664-670},
abstract={A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200
keywords={},
doi={10.1587/transele.E92.C.664},
ISSN={1745-1353},
month={May},}
부
TY - JOUR
TI - Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
T2 - IEICE TRANSACTIONS on Electronics
SP - 664
EP - 670
AU - Masahiro KONDA
AU - Akinobu TERAMOTO
AU - Tomoyuki SUWA
AU - Rihito KURODA
AU - Tadahiro OHMI
PY - 2009
DO - 10.1587/transele.E92.C.664
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200
ER -