The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
GaAs 2차원 MMIC 기반으로 새로 개발된 다층 인덕터를 소개합니다. 우리는 11개 이상의 레이어를 가진 GaAs MMIC의 인덕터에 대한 첫 번째 보고서일 수 있는 단일, 이중, 삼중 및 2중 적층형 인덕터를 분석했습니다. 단일층 및 다층 인덕터의 성능은 전자기장 시뮬레이션을 통해 측정 및 계산되었습니다. 다층 인덕터는 동일한 크기에도 불구하고 XNUMXD-MMIC에서 기존 인덕터보다 XNUMX~XNUMX배 더 높은 인덕턴스를 생성합니다. 이는 제안된 다층 인덕터가 기존 인덕터에 비해 동일한 인덕턴스로 더 작은 면적을 갖는다는 것을 의미한다. 또한 기생 용량과 같은 성능 요소가 어떻게 작동하는지에 대한 최초의 조사를 수행했습니다. Q-인덕터 및 자기 공진 주파수는 기존 인덕터에 비해 다층 인덕터에서 저하됩니다. 다층 인덕터를 사용하는 마이크로파 증폭기가 시연되었으며 회로 크기를 20%까지 줄이는 것으로 나타났습니다.
Yo YAMAGUCHI
Takana KAHO
Motoharu SASAKI
Kenjiro NISHIKAWA
Tomohiro SEKI
Tadao NAKAGAWA
Kazuhiro UEHARA
Kiyomichi ARAKI
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Yo YAMAGUCHI, Takana KAHO, Motoharu SASAKI, Kenjiro NISHIKAWA, Tomohiro SEKI, Tadao NAKAGAWA, Kazuhiro UEHARA, Kiyomichi ARAKI, "An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 7, pp. 1119-1125, July 2010, doi: 10.1587/transele.E93.C.1119.
Abstract: Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We analyzed single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. The performance of single- and multi-layer inductors was measured and calculated by electromagnetic field simulation. The multi-layer inductors produce 2-11 times higher inductance than that of conventional inductors on 2D-MMICs although they are the same size. This means that the proposed multi-layer inductors have smaller areas with the same inductances than those of conventional inductors. We also conducted the first-ever investigation of how performance factors such as parasitic capacitance, Q-factor, and self-resonant frequency are degraded in multi-layer inductors vis-a-vis those of conventional inductors. A microwave amplifier using multi-layer inductors was demonstrated and found to reduce circuit size by 20%.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1119/_p
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@ARTICLE{e93-c_7_1119,
author={Yo YAMAGUCHI, Takana KAHO, Motoharu SASAKI, Kenjiro NISHIKAWA, Tomohiro SEKI, Tadao NAKAGAWA, Kazuhiro UEHARA, Kiyomichi ARAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC},
year={2010},
volume={E93-C},
number={7},
pages={1119-1125},
abstract={Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We analyzed single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. The performance of single- and multi-layer inductors was measured and calculated by electromagnetic field simulation. The multi-layer inductors produce 2-11 times higher inductance than that of conventional inductors on 2D-MMICs although they are the same size. This means that the proposed multi-layer inductors have smaller areas with the same inductances than those of conventional inductors. We also conducted the first-ever investigation of how performance factors such as parasitic capacitance, Q-factor, and self-resonant frequency are degraded in multi-layer inductors vis-a-vis those of conventional inductors. A microwave amplifier using multi-layer inductors was demonstrated and found to reduce circuit size by 20%.},
keywords={},
doi={10.1587/transele.E93.C.1119},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC
T2 - IEICE TRANSACTIONS on Electronics
SP - 1119
EP - 1125
AU - Yo YAMAGUCHI
AU - Takana KAHO
AU - Motoharu SASAKI
AU - Kenjiro NISHIKAWA
AU - Tomohiro SEKI
AU - Tadao NAKAGAWA
AU - Kazuhiro UEHARA
AU - Kiyomichi ARAKI
PY - 2010
DO - 10.1587/transele.E93.C.1119
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2010
AB - Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We analyzed single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. The performance of single- and multi-layer inductors was measured and calculated by electromagnetic field simulation. The multi-layer inductors produce 2-11 times higher inductance than that of conventional inductors on 2D-MMICs although they are the same size. This means that the proposed multi-layer inductors have smaller areas with the same inductances than those of conventional inductors. We also conducted the first-ever investigation of how performance factors such as parasitic capacitance, Q-factor, and self-resonant frequency are degraded in multi-layer inductors vis-a-vis those of conventional inductors. A microwave amplifier using multi-layer inductors was demonstrated and found to reduce circuit size by 20%.
ER -