The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
(0001) AlGaN/GaN HEMT의 전기적 특성에 대한 부동태막의 응력 영향은 명시적으로 고려된 III족 질화물의 탄성 특성의 이방성 특성을 갖는 모서리 힘 모델의 틀에서 수치적으로 분석됩니다. 패시베이션 필름의 실제 압축 응력은 게이트 아래에 음의 압전 전하를 유도하고 몇 볼트 더 얕은 임계 전압을 생성합니다. 또한 압축 응력으로 인한 문턱 전압의 이동은 다음에 비례합니다. LG-1.1
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Naoteru SHIGEKAWA, Suehiro SUGITANI, "Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1212-1217, August 2010, doi: 10.1587/transele.E93.C.1212.
Abstract: Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1212/_p
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@ARTICLE{e93-c_8_1212,
author={Naoteru SHIGEKAWA, Suehiro SUGITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs},
year={2010},
volume={E93-C},
number={8},
pages={1212-1217},
abstract={Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
keywords={},
doi={10.1587/transele.E93.C.1212},
ISSN={1745-1353},
month={August},}
부
TY - JOUR
TI - Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1212
EP - 1217
AU - Naoteru SHIGEKAWA
AU - Suehiro SUGITANI
PY - 2010
DO - 10.1587/transele.E93.C.1212
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
ER -