The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
AlGaN/GaN 이종접합 전계 효과 트랜지스터(HFET)의 고전압 성능을 향상시키기 위해 우리는 p-GaN(p-sub HFET)에 옴 접촉이 있는 사파이어 기판에 p-GaN 에피층이 있는 AlGaN/GaN HFET를 제작했습니다. . 기판 바이어스에 따른 임계 전압 변화(VT-VSUB)은 버퍼층의 도핑 농도 프로파일을 직접 결정하는 데 사용되었습니다. 이것 VT-VSUB Si MOSFET에서 개발된 방법입니다. HFET의 경우 절연체는 에피택셜 성장된 이종 반도체 층으로 형성되는 반면, Si MOSFET의 경우 절연체는 비정질 SiO입니다.2. HFET가 에피택셜 절연체/반도체 인터페이스로 인해 채널 이동도가 더 높다는 점을 제외하면 HFET와 Si MOSFET은 장치 물리학 측면에서 기본적으로 동일합니다. 이러한 고려 사항을 바탕으로 이 솔루션의 타당성은 VT-VSUB AlGaN/GaN HFET에 대한 방법이 논의되었습니다. 결국 버퍼층 도핑 농도는 2로 측정됐다.
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Cheng-Yu HU, Katsutoshi NAKATANI, Hiroji KAWAI, Jin-Ping AO, Yasuo OHNO, "Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1234-1237, August 2010, doi: 10.1587/transele.E93.C.1234.
Abstract: To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1234/_p
부
@ARTICLE{e93-c_8_1234,
author={Cheng-Yu HU, Katsutoshi NAKATANI, Hiroji KAWAI, Jin-Ping AO, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer},
year={2010},
volume={E93-C},
number={8},
pages={1234-1237},
abstract={To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2
keywords={},
doi={10.1587/transele.E93.C.1234},
ISSN={1745-1353},
month={August},}
부
TY - JOUR
TI - Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1234
EP - 1237
AU - Cheng-Yu HU
AU - Katsutoshi NAKATANI
AU - Hiroji KAWAI
AU - Jin-Ping AO
AU - Yasuo OHNO
PY - 2010
DO - 10.1587/transele.E93.C.1234
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2
ER -