The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
조회수
86
산화물 소재는 투명 전극을 이용해 투명 소자를 만들 수 있다. 우리는 산화물 TFT를 사용하여 투명 발진기와 정류기 회로를 개발했습니다. 소스/드레인 및 게이트 전극은 ITO(Indium Thin Oxide)로 만들었고, 활성층은 유리기판 위에 IGZO(Indium Gallium Zinc Oxide) 투명물질로 만들었다. RC 발진기는 부트스트랩 인버터로 구성되었으며 V에서 813kHz 발진 주파수가 달성되었습니다.DD = 15 V. RF로부터 DC 전압 생성을 위해 투명 정류기를 제작하고 평가했습니다. RF를 생성하기 위해 성공적으로 작동하는 발진기에 전원을 공급하는 정류기의 DC 전압입니다. 데이터 전송을 위해 RF 전송은 투명 발진기의 RF로 평가되었습니다. 안테나가 발진기에 연결되었고 수신 안테나로의 RF 전송이 검증되었습니다. 이 송신 안테나를 통해 RF가 수신 안테나로 성공적으로 전송되었습니다. RFID의 투명시스템을 위해 투명안테나를 개발하여 데이터 송수신을 검증하였습니다.
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부
Seung Hyun CHO, Sang Woo KIM, Woo Seok CHEONG, Chun Won BYUN, Chi-Sun HWANG, Kyoung Ik CHO, Byung Seong BAE, "Oxide Thin Film Transistor Circuits for Transparent RFID Applications" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1504-1510, October 2010, doi: 10.1587/transele.E93.C.1504.
Abstract: Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1504/_p
부
@ARTICLE{e93-c_10_1504,
author={Seung Hyun CHO, Sang Woo KIM, Woo Seok CHEONG, Chun Won BYUN, Chi-Sun HWANG, Kyoung Ik CHO, Byung Seong BAE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Oxide Thin Film Transistor Circuits for Transparent RFID Applications},
year={2010},
volume={E93-C},
number={10},
pages={1504-1510},
abstract={Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.},
keywords={},
doi={10.1587/transele.E93.C.1504},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - Oxide Thin Film Transistor Circuits for Transparent RFID Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1504
EP - 1510
AU - Seung Hyun CHO
AU - Sang Woo KIM
AU - Woo Seok CHEONG
AU - Chun Won BYUN
AU - Chi-Sun HWANG
AU - Kyoung Ik CHO
AU - Byung Seong BAE
PY - 2010
DO - 10.1587/transele.E93.C.1504
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.
ER -