The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
조회수
137
우리는 0.35 µm CMOS 기술과 벌크 마이크로머시닝을 통해 SOI(silicon-on-insulator) 기판에 제작된 비냉각 적외선 방사 초점면 배열의 구동 회로에서 주요 노이즈 소스를 분석했습니다. 우리는 SOI와 벌크 기판에 각각 형성된 NMOS에 비해 SOI-MOSFET의 잡음 특성이 열등하지 않다는 것을 발견했습니다. 또한 전류원 NMOS를 충분히 크게 설계하여 센서 칩의 전체 노이즈를 줄이고 픽셀 pn 접합의 동작 전류를 최적화했습니다.
Risako UENO
Hiroto HONDA
Honam KWON
Koichi ISHII
Masako OGATA
Hitoshi YAGI
Ikuo FUJIWARA
Kazuhiro SUZUKI
Keita SASAKI
Hideyuki FUNAKI
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Risako UENO, Hiroto HONDA, Honam KWON, Koichi ISHII, Masako OGATA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI, Keita SASAKI, Hideyuki FUNAKI, "Uncooled Infrared Radiation Focal Plane Array with Low Noise Pixel Driving Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 11, pp. 1577-1582, November 2010, doi: 10.1587/transele.E93.C.1577.
Abstract: We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1577/_p
부
@ARTICLE{e93-c_11_1577,
author={Risako UENO, Hiroto HONDA, Honam KWON, Koichi ISHII, Masako OGATA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI, Keita SASAKI, Hideyuki FUNAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Uncooled Infrared Radiation Focal Plane Array with Low Noise Pixel Driving Circuit},
year={2010},
volume={E93-C},
number={11},
pages={1577-1582},
abstract={We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.},
keywords={},
doi={10.1587/transele.E93.C.1577},
ISSN={1745-1353},
month={November},}
부
TY - JOUR
TI - Uncooled Infrared Radiation Focal Plane Array with Low Noise Pixel Driving Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 1577
EP - 1582
AU - Risako UENO
AU - Hiroto HONDA
AU - Honam KWON
AU - Koichi ISHII
AU - Masako OGATA
AU - Hitoshi YAGI
AU - Ikuo FUJIWARA
AU - Kazuhiro SUZUKI
AU - Keita SASAKI
AU - Hideyuki FUNAKI
PY - 2010
DO - 10.1587/transele.E93.C.1577
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2010
AB - We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.
ER -