The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 SiO2에서 작은 직경의 실리콘 나노와이어(SiNW)의 성공적인 상향식 합성을 보고합니다.2 및 Si3N4 표면. Au 나노 입자의 직경(10-20 nm)과 비슷한 직경을 가진 SiNW는 나노와이어 성장에 일반적으로 사용되는 Si 기판뿐만 아니라 이러한 표면에서도 성장했습니다. SiO에서 고밀도 SiNW를 얻기 위한 성장 온도2 및 Si3N4 기판이 더 높습니다(460-470
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Jae Hyun AHN, Jae-Hyun LEE, Tae-Woong KOO, MyungGil KANG, Dongmok WHANG, SungWoo HWANG, "Synthesis of Small Diameter Silicon Nanowires on SiO2 and Si3N4 Surfaces" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 546-551, May 2010, doi: 10.1587/transele.E93.C.546.
Abstract: We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO2 and Si3N4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO2 and Si3N4 substrates is higher (460-470
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.546/_p
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@ARTICLE{e93-c_5_546,
author={Jae Hyun AHN, Jae-Hyun LEE, Tae-Woong KOO, MyungGil KANG, Dongmok WHANG, SungWoo HWANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Synthesis of Small Diameter Silicon Nanowires on SiO2 and Si3N4 Surfaces},
year={2010},
volume={E93-C},
number={5},
pages={546-551},
abstract={We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO2 and Si3N4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO2 and Si3N4 substrates is higher (460-470
keywords={},
doi={10.1587/transele.E93.C.546},
ISSN={1745-1353},
month={May},}
부
TY - JOUR
TI - Synthesis of Small Diameter Silicon Nanowires on SiO2 and Si3N4 Surfaces
T2 - IEICE TRANSACTIONS on Electronics
SP - 546
EP - 551
AU - Jae Hyun AHN
AU - Jae-Hyun LEE
AU - Tae-Woong KOO
AU - MyungGil KANG
AU - Dongmok WHANG
AU - SungWoo HWANG
PY - 2010
DO - 10.1587/transele.E93.C.546
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO2 and Si3N4 surfaces. SiNWs with diameter comparable to the diameter of the Au nano-particles (10-20 nm) were grown on these surfaces, as well as on Si substrates which are commonly used for the nanowire growth. The growth temperature for obtaining a high density of SiNWs on SiO2 and Si3N4 substrates is higher (460-470
ER -