The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Al을 이용한 폴리실리콘-산화알루미늄-질화-산화-실리콘(SANOS) 비휘발성 메모리 소자의 프로그래밍 특성2O3 및 SiO2 적층된 터널링 층이 조사되었습니다. 전자와 정공은 Si에서 표류합니다.3N4 제안된 SANOS 장치의 프로그램 속도를 결정하기 위해 계층을 계산했습니다. 시뮬레이션 결과, SiO2를 활용하여 SANOS의 프로그래밍 속도 향상이 달성된 것으로 나타났습니다.2 및 알2O3 누적된 터널링 레이어.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Hyun Woo KIM, Dong Hun KIM, Joo Hyung YOU, Tae Whan KIM, "Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 651-653, May 2010, doi: 10.1587/transele.E93.C.651.
Abstract: The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.651/_p
부
@ARTICLE{e93-c_5_651,
author={Hyun Woo KIM, Dong Hun KIM, Joo Hyung YOU, Tae Whan KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers},
year={2010},
volume={E93-C},
number={5},
pages={651-653},
abstract={The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.},
keywords={},
doi={10.1587/transele.E93.C.651},
ISSN={1745-1353},
month={May},}
부
TY - JOUR
TI - Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers
T2 - IEICE TRANSACTIONS on Electronics
SP - 651
EP - 653
AU - Hyun Woo KIM
AU - Dong Hun KIM
AU - Joo Hyung YOU
AU - Tae Whan KIM
PY - 2010
DO - 10.1587/transele.E93.C.651
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.
ER -