The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 mm-wave 주파수에서 온칩 S-파라미터 측정을 위한 디임베딩 방법을 제안합니다. 제안하는 방법은 길이가 다른 두 개의 전송선만을 사용한다. 제안된 방법에서는 두 개의 전송 라인에서 추출된 기생 성분 모델을 트랜지스터, 커패시터, 인덕터 등과 같은 다른 유형의 DUT에 대한 디임베딩에 사용할 수 있습니다. 실험 결과는 서로 다른 DUT 간의 특성 임피던스 오차가 있음을 보여줍니다. 전송선 길이는 0.7GHz 이상에서 40% 미만입니다. 추출된 패드 모델도 표시됩니다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Naoki TAKAYAMA, Kota MATSUSHITA, Shogo ITO, Ning LI, Keigo BUNSEN, Kenichi OKADA, Akira MATSUZAWA, "A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 6, pp. 812-819, June 2010, doi: 10.1587/transele.E93.C.812.
Abstract: This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.812/_p
부
@ARTICLE{e93-c_6_812,
author={Naoki TAKAYAMA, Kota MATSUSHITA, Shogo ITO, Ning LI, Keigo BUNSEN, Kenichi OKADA, Akira MATSUZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling},
year={2010},
volume={E93-C},
number={6},
pages={812-819},
abstract={This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.},
keywords={},
doi={10.1587/transele.E93.C.812},
ISSN={1745-1353},
month={June},}
부
TY - JOUR
TI - A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling
T2 - IEICE TRANSACTIONS on Electronics
SP - 812
EP - 819
AU - Naoki TAKAYAMA
AU - Kota MATSUSHITA
AU - Shogo ITO
AU - Ning LI
AU - Keigo BUNSEN
AU - Kenichi OKADA
AU - Akira MATSUZAWA
PY - 2010
DO - 10.1587/transele.E93.C.812
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2010
AB - This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.
ER -