The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 딥펜 나노리소그래피(DPN)를 사용하여 Si 기판에 '고체 잉크'를 생성하고 InAs 나노와이어를 직접 패터닝하는 새로운 접근 방식을 보고합니다. '잉크'를 준비하는 일반적인 방법은 초음파 처리를 사용하여 나노입자를 액화시키는 용액 기반 프로세스이며, 이 문서에서는 이를 '액체 잉크'라고 합니다. 잉크 용액 기반 DPN 패터닝이 대부분의 연구에서 널리 퍼져 있으므로 여기서는 잉크 프로세스에 용액이 필요 없는 새로운 방법인 '고체 잉크'를 제안합니다. 우리 연구에서는 80% 이상의 습도에서 InAs 나노와이어 웨이퍼 위에 팁을 직접 스캔하여 InAs 나노와이어를 AFM 팁으로 옮겼습니다. 이 방법을 사용하면 잉크 준비와 '잉킹' 공정이 하나의 단계로 결합되며, 다량의 나노와이어를 팁에 수집하여 직접 패터닝을 위한 연속적인 잉크 흐름을 형성할 수 있습니다.
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Tong WANG, Yoshiki SHIMIZU, Naoyuki ISHIDA, Hirobumi USHIJIMA, "A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 2, pp. 146-150, February 2011, doi: 10.1587/transele.E94.C.146.
Abstract: We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.146/_p
부
@ARTICLE{e94-c_2_146,
author={Tong WANG, Yoshiki SHIMIZU, Naoyuki ISHIDA, Hirobumi USHIJIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography},
year={2011},
volume={E94-C},
number={2},
pages={146-150},
abstract={We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.},
keywords={},
doi={10.1587/transele.E94.C.146},
ISSN={1745-1353},
month={February},}
부
TY - JOUR
TI - A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 146
EP - 150
AU - Tong WANG
AU - Yoshiki SHIMIZU
AU - Naoyuki ISHIDA
AU - Hirobumi USHIJIMA
PY - 2011
DO - 10.1587/transele.E94.C.146
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2011
AB - We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.
ER -