The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
수많은 통계 조사 없이 회로 성능 변동을 예측하는 오랜 문제는 표면 전위 기반 MOSFET 모델을 통해 해결 가능한 것으로 입증되었습니다. 프로세스 변화를 반영하는 물리적 장치 매개변수에 모델 매개변수를 직접 연결하고 모델 매개변수 수를 줄이는 것이 핵심 모델 속성을 가능하게 합니다. 표면 전위 기반 모델 HiSIM2가 측정된 전위를 재현할 수 있음이 입증되었습니다. I-V 그리고 장치/프로세스 관련 모델 매개변수와의 파생어 변형입니다. 칩 간 및 내부 변동을 모두 포함하는 51단계 링 오실레이터 주파수 변동을 예측하는 데 사용하면 시뮬레이션 시간을 단축하여 측정값을 재현합니다.
Norio SADACHIKA
Shu MIMURA
Akihiro YUMISAKI
Kou JOHGUCHI
Akihiro KAYA
Mitiko MIURA-MATTAUSCH
Hans Jurgen MATTAUSCH
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Norio SADACHIKA, Shu MIMURA, Akihiro YUMISAKI, Kou JOHGUCHI, Akihiro KAYA, Mitiko MIURA-MATTAUSCH, Hans Jurgen MATTAUSCH, "Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 3, pp. 361-367, March 2011, doi: 10.1587/transele.E94.C.361.
Abstract: The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.361/_p
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@ARTICLE{e94-c_3_361,
author={Norio SADACHIKA, Shu MIMURA, Akihiro YUMISAKI, Kou JOHGUCHI, Akihiro KAYA, Mitiko MIURA-MATTAUSCH, Hans Jurgen MATTAUSCH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design},
year={2011},
volume={E94-C},
number={3},
pages={361-367},
abstract={The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.},
keywords={},
doi={10.1587/transele.E94.C.361},
ISSN={1745-1353},
month={March},}
부
TY - JOUR
TI - Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 361
EP - 367
AU - Norio SADACHIKA
AU - Shu MIMURA
AU - Akihiro YUMISAKI
AU - Kou JOHGUCHI
AU - Akihiro KAYA
AU - Mitiko MIURA-MATTAUSCH
AU - Hans Jurgen MATTAUSCH
PY - 2011
DO - 10.1587/transele.E94.C.361
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2011
AB - The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
ER -