The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 다양한 높은 정온도 계수(TC) 저항기, 0.35단계 연산 상호컨덕턴스 증폭기(OTA) 및 735.6μm의 단순화된 시동 회로를 활용하는 CMOS 밴드갭 및 전류 기준에 대한 저항기 보상 기술을 제시합니다. CMOS 프로세스. 제안된 밴드갭 및 전류 레퍼런스에서는 높은 정온도 계수(TC)를 갖는 수많은 보상 저항을 기생 npn 및 pnp 바이폴라 접합 트랜지스터 소자에 추가하여 온도에 독립적인 전압 레퍼런스 및 전류 레퍼런스를 생성합니다. 측정을 통해 888.1V의 공급 전압에서 91.28nA의 전류 레퍼런스, 3.3mV의 전압 레퍼런스, 49μW의 전력 소비를 확인했습니다. 전압 TC는 XNUMXppm/입니다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Guo-Ming SUNG, Ying-Tsu LAI, Chien-Lin LU, "A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 4, pp. 670-673, April 2011, doi: 10.1587/transele.E94.C.670.
Abstract: This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.670/_p
부
@ARTICLE{e94-c_4_670,
author={Guo-Ming SUNG, Ying-Tsu LAI, Chien-Lin LU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit},
year={2011},
volume={E94-C},
number={4},
pages={670-673},
abstract={This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/
keywords={},
doi={10.1587/transele.E94.C.670},
ISSN={1745-1353},
month={April},}
부
TY - JOUR
TI - A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 670
EP - 673
AU - Guo-Ming SUNG
AU - Ying-Tsu LAI
AU - Chien-Lin LU
PY - 2011
DO - 10.1587/transele.E94.C.670
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2011
AB - This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/
ER -