The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Λ 및 V-유형 IV 용량 결합 다중 입력 MOSFET을 사용하여 특성을 제안합니다. 그들의 IV 특성은 외부 제어 전압에 의해 쉽게 변경될 수 있습니다. 더욱이, 제안된 회로는 강화형 MOSFET만 필요하기 때문에 표준 CMOS 반도체 프로세스와 완벽하게 호환됩니다. 또한 제안된 회로의 용량 결합 다중 입력 MOSFET에 비선형 커패시터를 사용할 수 있으므로 비선형 커패시터를 사용하는 간단한 디지털 CMOS 프로세스를 사용하여 제안된 회로를 제작할 수 있습니다. 회로의 수치 시뮬레이션을 위한 간단한 방정식이 도출됩니다. 또한, 수치 시뮬레이션과 이산 요소를 사용한 실험 결과를 보여줍니다.
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Yoshihiko HORIO, Ken'ichi WATARAI, Kazuyuki AIHARA, "Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs" in IEICE TRANSACTIONS on Fundamentals,
vol. E82-A, no. 9, pp. 1926-1936, September 1999, doi: .
Abstract: A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e82-a_9_1926/_p
부
@ARTICLE{e82-a_9_1926,
author={Yoshihiko HORIO, Ken'ichi WATARAI, Kazuyuki AIHARA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs},
year={1999},
volume={E82-A},
number={9},
pages={1926-1936},
abstract={A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.},
keywords={},
doi={},
ISSN={},
month={September},}
부
TY - JOUR
TI - Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1926
EP - 1936
AU - Yoshihiko HORIO
AU - Ken'ichi WATARAI
AU - Kazuyuki AIHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E82-A
IS - 9
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - September 1999
AB - A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
ER -