The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 능동 및 수동 애플리케이션에서 상호 변조 제품의 레벨(IM)과 스퓨리어스 응답을 정확하게 예측하는 데 적합한 매개변수 추출 절차와 함께 개선된 비선형 FET 모델을 제안합니다. 이 새로운 모델을 사용하면 포화 영역과 선형 영역 모두에서 게이트 전압과 드레인 전압에 대한 드레인 전류 동작과 그 파생물을 정확하게 캡처할 수 있습니다. I-V 편향 도메인. 이 모델은 편향 의존성을 정확하게 예측하는 것으로 나타났습니다. S-최대 mm파 주파수까지 증폭기 및 믹서 애플리케이션에 대한 IM 레벨과 매개변수.
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Kohei FUJII, Yasuhiko HARA, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, "A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications" in IEICE TRANSACTIONS on Fundamentals,
vol. E83-A, no. 2, pp. 228-235, February 2000, doi: .
Abstract: This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e83-a_2_228/_p
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@ARTICLE{e83-a_2_228,
author={Kohei FUJII, Yasuhiko HARA, Fadhel M. GHANNOUCHI, Toshiyuki YAKABE, Hatsuo YABE, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications},
year={2000},
volume={E83-A},
number={2},
pages={228-235},
abstract={This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.},
keywords={},
doi={},
ISSN={},
month={February},}
부
TY - JOUR
TI - A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 228
EP - 235
AU - Kohei FUJII
AU - Yasuhiko HARA
AU - Fadhel M. GHANNOUCHI
AU - Toshiyuki YAKABE
AU - Hatsuo YABE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E83-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2000
AB - This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels (IM) and spurious responses in active and passive applications. This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain. It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
ER -