The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
회로 시뮬레이션을 위한 MOSFET 모델링의 시급한 작업은 기술 발전으로 인해 발생하는 새로운 물리적 현상에 대한 손쉬운 적응과 충분한 시뮬레이션 정확도입니다. 이러한 MOSFET 모델을 개발하기 위해 현재 추구되고 있는 접근 방식이 요약되어 있습니다. 이러한 작업을 수행하는 능력과 중요한 남은 문제에 대해 논의합니다. 0.10μm MOSFET 기술 노드용으로 개발된 드리프트-확산 근사법을 기반으로 하는 최초의 일반적으로 사용 가능한 모델인 HiSIM 모델에 중점을 둡니다.
Mitiko MIURA-MATTAUSCH
Hiroaki UENO
Hans Juergen MATTAUSCH
Shigetaka KUMASHIRO
Tetsuya YAMAGUCHI
Kyoji YAMASHITA
Noriaki NAKAYAMA
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Mitiko MIURA-MATTAUSCH, Hiroaki UENO, Hans Juergen MATTAUSCH, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA, "Circuit Simulation Models for Coming MOSFET Generations" in IEICE TRANSACTIONS on Fundamentals,
vol. E85-A, no. 4, pp. 740-748, April 2002, doi: .
Abstract: The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e85-a_4_740/_p
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@ARTICLE{e85-a_4_740,
author={Mitiko MIURA-MATTAUSCH, Hiroaki UENO, Hans Juergen MATTAUSCH, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Circuit Simulation Models for Coming MOSFET Generations},
year={2002},
volume={E85-A},
number={4},
pages={740-748},
abstract={The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.},
keywords={},
doi={},
ISSN={},
month={April},}
부
TY - JOUR
TI - Circuit Simulation Models for Coming MOSFET Generations
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 740
EP - 748
AU - Mitiko MIURA-MATTAUSCH
AU - Hiroaki UENO
AU - Hans Juergen MATTAUSCH
AU - Shigetaka KUMASHIRO
AU - Tetsuya YAMAGUCHI
AU - Kyoji YAMASHITA
AU - Noriaki NAKAYAMA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E85-A
IS - 4
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - April 2002
AB - The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.
ER -