The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 130 nm SiGe BiCMOS 기술의 광수신기용 저잡음 밸런스 동작 트랜스임피던스 증폭기(TIA)를 구현했으며, 최적의 트레이드오프 이미터 전류 밀도와 고주파 잡음 코너 위치를 분석하여 획득을 수행했습니다. 저소음 성능. TIA 입력에 불필요한 노이즈를 발생시키지 않는 AZFL(Auto-Zero Feedback Loop), 대칭성이 높은 테일 전류 싱크 및 AZFL의 연산 증폭기(OpAmp) 출력을 공유하는 밸런스 작동 TIA는 TIA. 또한 대역폭을 확장하고 입력 참조 잡음을 줄이기 위해 캐스코드 및 션트 피드백도 사용되었습니다. 또한 션트 피드백을 사용하는 HBT(이종접합 양극성 트랜지스터) TIA의 고주파 노이즈 코너를 계산하는 공식이 도출되었습니다. 전기적 측정은 이 작업에 설명된 개념을 검증하기 위해 수행되었으며, 입력 기준 잡음 전류 전력 스펙트럼 밀도(PSD), 밸런스 작동(V)의 9.6pA/√Hz가 나타납니다.IN1=896mV, VIN2=896mV, VOUT1= 1.978V, VOUT2=1.979V), 대역폭 32GHz, 전체 트랜스임피던스 이득 68.6dBΩ, 총 소비전력 117mW, 칩 면적 484μm × 486μm입니다.
Chao WANG
Hunan Institude of Engineering
Xianliang LUO
Hunan Institude of Engineering
Mohamed ATEF
United Arab Emirates University,Assiut University
Pan TANG
South East University
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부
Chao WANG, Xianliang LUO, Mohamed ATEF, Pan TANG, "A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers" in IEICE TRANSACTIONS on Fundamentals,
vol. E103-A, no. 12, pp. 1408-1416, December 2020, doi: 10.1587/transfun.2020VLP0001.
Abstract: In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2020VLP0001/_p
부
@ARTICLE{e103-a_12_1408,
author={Chao WANG, Xianliang LUO, Mohamed ATEF, Pan TANG, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers},
year={2020},
volume={E103-A},
number={12},
pages={1408-1416},
abstract={In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.},
keywords={},
doi={10.1587/transfun.2020VLP0001},
ISSN={1745-1337},
month={December},}
부
TY - JOUR
TI - A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1408
EP - 1416
AU - Chao WANG
AU - Xianliang LUO
AU - Mohamed ATEF
AU - Pan TANG
PY - 2020
DO - 10.1587/transfun.2020VLP0001
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E103-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2020
AB - In this paper, a balance operation Transimpedance Amplifier (TIA) with low-noise has been implemented for optical receivers in 130 nm SiGe BiCMOS Technology, in which the optimal tradeoff emitter current density and the location of high-frequency noise corner were analyzed for acquiring low-noise performance. The Auto-Zero Feedback Loop (AZFL) without introducing unnecessary noises at input of the TIA, the tail current sink with high symmetries and the balance operation TIA with the shared output of Operational Amplifier (OpAmp) in AZFL were designed to keep balanced operation for the TIA. Moreover, cascode and shunt-feedback were also employed to expanding bandwidth and decreasing input referred noise. Besides, the formula for calculating high-frequency noise corner in Heterojunction Bipolar Transistor (HBT) TIA with shunt-feedback was derived. The electrical measurement was performed to validate the notions described in this work, appearing 9.6 pA/√Hz of input referred noise current Power Spectral Density (PSD), balance operation (VIN1=896mV, VIN2=896mV, VOUT1=1.978V, VOUT2=1.979V), bandwidth of 32GHz, overall transimpedance gain of 68.6dBΩ, a total 117mW power consumption and chip area of 484µm × 486µm.
ER -