The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 연구는 데이터센터 스토리지에서 정확하고 근사한 스토리지의 이종 통합을 제안합니다. 스토리지 제어 엔진은 정확하고 오류에 강한 애플리케이션을 각각 정확한 스토리지와 대략적인 스토리지에 할당합니다. 비휘발성 메모리 용량 알고리즘을 적용하여 정밀한 스토리지와 대략적인 스토리지의 적절한 사용을 검사합니다. 시간에 따른 애플리케이션 변화에 대응하기 위해 비휘발성 메모리 용량 알고리즘은 스토리지 클래스 메모리(SCM), 즉 메모리형 SCM(M-SCM)과 스토리지형 SCM(S-SCM)의 용량을 변경합니다. 비휘발성 메모리 자원. 대용량 메모리로는 XNUMX차원 삼중레벨셀(TLC) 낸드플래시가 사용된다. 결과는 최대 저장 비용이 높을 때 정밀 저장이 높은 성능을 나타냄을 나타냅니다. 반면, 최대 저장 비용이 낮은 근사 저장은 낮은 비트 비용의 근사 다중 레벨 셀(MLC) S-SCM을 사용하여 높은 성능을 나타냅니다.
Chihiro MATSUI
The University of Tokyo
Ken TAKEUCHI
The University of Tokyo
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부
Chihiro MATSUI, Ken TAKEUCHI, "Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads" in IEICE TRANSACTIONS on Fundamentals,
vol. E106-A, no. 3, pp. 491-503, March 2023, doi: 10.1587/transfun.2022VLP0001.
Abstract: This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2022VLP0001/_p
부
@ARTICLE{e106-a_3_491,
author={Chihiro MATSUI, Ken TAKEUCHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads},
year={2023},
volume={E106-A},
number={3},
pages={491-503},
abstract={This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.},
keywords={},
doi={10.1587/transfun.2022VLP0001},
ISSN={1745-1337},
month={March},}
부
TY - JOUR
TI - Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 491
EP - 503
AU - Chihiro MATSUI
AU - Ken TAKEUCHI
PY - 2023
DO - 10.1587/transfun.2022VLP0001
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E106-A
IS - 3
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - March 2023
AB - This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.
ER -