The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
다중 모드 애플리케이션을 위한 CMOS 트랜스컨덕터가 제시됩니다. 트랜스컨덕터에는 전압-전류 변환기와 전류 배율기가 포함되어 있습니다. 전압-전류 변환은 선형 영역 MOS 트랜지스터를 사용하며 변환은 넓은 입력 스윙 범위에 걸쳐 높은 선형성을 제공합니다. 약한 반전 영역에서 작동하는 전류 승수는 선형성을 저하시키지 않고 넓은 상호 컨덕턴스 튜닝 범위를 제공합니다. 트랜스컨덕터는 TSMC 0.18μm CMOS 프로세스로 설계 및 제작되었습니다. 결과는 상호 컨덕턴스 튜닝 비율이 23이고 IM3 성능이 -68.5dB임을 보여줍니다.
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부
Tien-Yu LO, Chung-Chih HUNG, Chi-Hsiang LO, "A -68.5 dB IM3 Low-Voltage CMOS Transconductor with Wide Tuning Range" in IEICE TRANSACTIONS on Fundamentals,
vol. E93-A, no. 8, pp. 1556-1559, August 2010, doi: 10.1587/transfun.E93.A.1556.
Abstract: A CMOS transconductor for multi-mode application is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier, which operates in the weak inversion region, provides a wide transconductance tuning range without degrading the linearity. The transconductor was designed and fabricated in the TSMC 0.18-µm CMOS process. The results show the transconductance tuning ratio of 23 and the IM3 performance of -68.5 dB.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E93.A.1556/_p
부
@ARTICLE{e93-a_8_1556,
author={Tien-Yu LO, Chung-Chih HUNG, Chi-Hsiang LO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A -68.5 dB IM3 Low-Voltage CMOS Transconductor with Wide Tuning Range},
year={2010},
volume={E93-A},
number={8},
pages={1556-1559},
abstract={A CMOS transconductor for multi-mode application is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier, which operates in the weak inversion region, provides a wide transconductance tuning range without degrading the linearity. The transconductor was designed and fabricated in the TSMC 0.18-µm CMOS process. The results show the transconductance tuning ratio of 23 and the IM3 performance of -68.5 dB.},
keywords={},
doi={10.1587/transfun.E93.A.1556},
ISSN={1745-1337},
month={August},}
부
TY - JOUR
TI - A -68.5 dB IM3 Low-Voltage CMOS Transconductor with Wide Tuning Range
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1556
EP - 1559
AU - Tien-Yu LO
AU - Chung-Chih HUNG
AU - Chi-Hsiang LO
PY - 2010
DO - 10.1587/transfun.E93.A.1556
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E93-A
IS - 8
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - August 2010
AB - A CMOS transconductor for multi-mode application is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier, which operates in the weak inversion region, provides a wide transconductance tuning range without degrading the linearity. The transconductor was designed and fabricated in the TSMC 0.18-µm CMOS process. The results show the transconductance tuning ratio of 23 and the IM3 performance of -68.5 dB.
ER -