The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
지난 20년 동안 CMOS 공정 기술이 크게 발전함에 따라 마이크로파 대역에서 작동하는 RF CMOS 회로는 구성 요소 회로 수준에서 다중 대역/다중 모드 트랜시버 수준으로 빠르게 발전했습니다. 향후 XNUMX년 안에 다음 장치가 실현될 가능성이 높습니다. (i) 소프트웨어 정의 무선 통신(SDR), 인지 무선 통신(CR) 및 재구성 가능한 무선 통신(RR)에 사용되는 것과 같은 다목적 트랜시버; (ii) 밀리미터파 또는 테라헤르츠파 영역에서 작동하고 고속 및 대용량 데이터 전송을 달성하는 시스템 (iii) 일상생활에서 광범위하게 사용될 초소형 저전력 RF 통신 시스템. 그러나 아날로그 RF 회로를 설계하는 고전 기술은 연속 전압 및 연속 시간 신호의 경우에만 적용할 수 있기 때문에 위에서 언급한 장치의 회로를 설계하는 데 사용할 수 없습니다. 따라서 광대역 동작을 구현하고 신호 왜곡을 보상하기 위해서는 이산 전압 및 이산 시간 영역을 사용하는 고속 디지털 회로 설계를 아날로그 설계와 통합해야 합니다. 프로세스, 전원 공급 장치 전압 및 온도의 변화. 또한, 마이크로 RF 통신 시스템의 소형화를 위해서는 안테나와 인터페이스 회로의 작은 집적화가 필수라고 생각되므로, 이종 디바이스의 MEMS(Micro Electro Mechanical Systems) 디바이스 등과 통합 설계 환경을 구축하는 것이 필요하다. 더욱 중요해집니다. 본 논문에서는 RF CMOS 회로 개발의 역사와 현황을 검토하고, RF CMOS 회로의 향후 현황을 예측한다.
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Noboru ISHIHARA, Shuhei AMAKAWA, Kazuya MASU, "RF CMOS Integrated Circuit: History, Current Status and Future Prospects" in IEICE TRANSACTIONS on Fundamentals,
vol. E94-A, no. 2, pp. 556-567, February 2011, doi: 10.1587/transfun.E94.A.556.
Abstract: As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SDR), cognitive radios (CR), and reconfigurable radios (RR); (ii) systems that operate in the millimeter-wave or terahertz-wave region and achieve high speed and large-capacity data transmission; and (iii) microminiaturized low-power RF communication systems that will be extensively used in our everyday lives. However, classical technology for designing analog RF circuits cannot be used to design circuits for the abovementioned devices since it can be applied only in the case of continuous voltage and continuous time signals; therefore, it is necessary to integrate the design of high-speed digital circuits, which is based on the use of discrete voltages and the discrete time domain, with analog design, in order to both achieve wideband operation and compensate for signal distortions as well as variations in process, power supply voltage, and temperature. Moreover, as it is thought that small integration of the antenna and the interface circuit is indispensable to achieve miniaturized micro RF communication systems, the construction of the integrated design environment with the Micro Electro Mechanical Systems (MEMS) device etc. of the different kind devices becomes more important. In this paper, the history and the current status of the development of RF CMOS circuits are reviewed, and the future status of RF CMOS circuits is predicted.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E94.A.556/_p
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@ARTICLE{e94-a_2_556,
author={Noboru ISHIHARA, Shuhei AMAKAWA, Kazuya MASU, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={RF CMOS Integrated Circuit: History, Current Status and Future Prospects},
year={2011},
volume={E94-A},
number={2},
pages={556-567},
abstract={As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SDR), cognitive radios (CR), and reconfigurable radios (RR); (ii) systems that operate in the millimeter-wave or terahertz-wave region and achieve high speed and large-capacity data transmission; and (iii) microminiaturized low-power RF communication systems that will be extensively used in our everyday lives. However, classical technology for designing analog RF circuits cannot be used to design circuits for the abovementioned devices since it can be applied only in the case of continuous voltage and continuous time signals; therefore, it is necessary to integrate the design of high-speed digital circuits, which is based on the use of discrete voltages and the discrete time domain, with analog design, in order to both achieve wideband operation and compensate for signal distortions as well as variations in process, power supply voltage, and temperature. Moreover, as it is thought that small integration of the antenna and the interface circuit is indispensable to achieve miniaturized micro RF communication systems, the construction of the integrated design environment with the Micro Electro Mechanical Systems (MEMS) device etc. of the different kind devices becomes more important. In this paper, the history and the current status of the development of RF CMOS circuits are reviewed, and the future status of RF CMOS circuits is predicted.},
keywords={},
doi={10.1587/transfun.E94.A.556},
ISSN={1745-1337},
month={February},}
부
TY - JOUR
TI - RF CMOS Integrated Circuit: History, Current Status and Future Prospects
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 556
EP - 567
AU - Noboru ISHIHARA
AU - Shuhei AMAKAWA
AU - Kazuya MASU
PY - 2011
DO - 10.1587/transfun.E94.A.556
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E94-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2011
AB - As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SDR), cognitive radios (CR), and reconfigurable radios (RR); (ii) systems that operate in the millimeter-wave or terahertz-wave region and achieve high speed and large-capacity data transmission; and (iii) microminiaturized low-power RF communication systems that will be extensively used in our everyday lives. However, classical technology for designing analog RF circuits cannot be used to design circuits for the abovementioned devices since it can be applied only in the case of continuous voltage and continuous time signals; therefore, it is necessary to integrate the design of high-speed digital circuits, which is based on the use of discrete voltages and the discrete time domain, with analog design, in order to both achieve wideband operation and compensate for signal distortions as well as variations in process, power supply voltage, and temperature. Moreover, as it is thought that small integration of the antenna and the interface circuit is indispensable to achieve miniaturized micro RF communication systems, the construction of the integrated design environment with the Micro Electro Mechanical Systems (MEMS) device etc. of the different kind devices becomes more important. In this paper, the history and the current status of the development of RF CMOS circuits are reviewed, and the future status of RF CMOS circuits is predicted.
ER -