The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
특수 클래스의 미분 방정식 해법의 음이 아닌 단조로운 특성을 기반으로 MOS 디지털 회로 클래스의 과도 응답은 일부 트랜지스터 매개변수에 대해 단조 감도를 갖는 것으로 입증되었습니다.
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부
Kiichi URAHAMA, "Monotone Sensitivity of a Class of MOS Digital Circuits" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 3, pp. 169-171, March 1987, doi: .
Abstract: On the basis of a nonnegative and a monotonic property of the solution of a special class of differential equations, the transient responses of a class of MOS digital circuits are proven to have a monotone sensitivity with respect to some transistor parameters.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_3_169/_p
부
@ARTICLE{e70-e_3_169,
author={Kiichi URAHAMA, },
journal={IEICE TRANSACTIONS on transactions},
title={Monotone Sensitivity of a Class of MOS Digital Circuits},
year={1987},
volume={E70-E},
number={3},
pages={169-171},
abstract={On the basis of a nonnegative and a monotonic property of the solution of a special class of differential equations, the transient responses of a class of MOS digital circuits are proven to have a monotone sensitivity with respect to some transistor parameters.},
keywords={},
doi={},
ISSN={},
month={March},}
부
TY - JOUR
TI - Monotone Sensitivity of a Class of MOS Digital Circuits
T2 - IEICE TRANSACTIONS on transactions
SP - 169
EP - 171
AU - Kiichi URAHAMA
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 3
JA - IEICE TRANSACTIONS on transactions
Y1 - March 1987
AB - On the basis of a nonnegative and a monotonic property of the solution of a special class of differential equations, the transient responses of a class of MOS digital circuits are proven to have a monotone sensitivity with respect to some transistor parameters.
ER -